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HGBU1004 PDF预览

HGBU1004

更新时间: 2024-11-30 18:09:47
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 218K
描述
GBU

HGBU1004 数据手册

 浏览型号HGBU1004的Datasheet PDF文件第2页浏览型号HGBU1004的Datasheet PDF文件第3页浏览型号HGBU1004的Datasheet PDF文件第4页 
RoHS  
HGBU1004  
COMPLIANT  
High Efficient Bridge Rectifiers  
Features  
UL recognition, file #E230084  
● Glass passivated chip junction  
● Ideal for printed circuit boards  
● High surge current capability  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification for  
monitor, TV, printer, power supply, switching mode power supply,  
adapter, audio equipment, and home appliances applications.  
Mechanical Data  
ackage: GBU  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
~
a
~
(T =25Unless otherwise specified  
Maximum Ratings  
HGBU1004  
PARAMETER  
SYMBOL UNIT  
HGBU1004  
400  
Device marking code  
V
V
V
V
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
280  
V
Maximum DC blocking Voltage  
400  
DC  
With heatsink  
Average rectified output  
Tc =100℃  
10.0  
3.2  
I
current @60Hz half sine  
Without heatsink  
O
A
wave, R-load  
Ta =25℃  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
150  
I
A
FSM  
I2t  
300  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
A2S  
93  
@1ms≤t≤8.3ms Tj=25, Rating of per diode  
T
Storage temperature  
Junction temperature  
-55 ~ +150  
-55 ~ +150  
stg  
T
j
Dielectric strength  
@ Terminals to case, AC 1 minute  
Mounting torque  
@Recommend torque5kgꞏcm  
V
KV  
dis  
2.5  
8
Tor  
kgꞏcm  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
HGBU1004  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous forward  
voltage drop per diode  
V
V
1.3  
5
F
I
=5.0A  
FM  
T =25℃  
Maximum DC reverse current at  
rated DC blocking voltage per  
diode  
j
I
μA  
ns  
R
100  
50  
T =125℃  
j
IF=0.5A,IR=1.0A,  
IRR=0.25A  
Maximum reverse recovery time  
TRR  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B3368  
Rev.1.0,09-Apr-24  
www.21yangjie.com  

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