Datasheet > HFW640

HFW640

更新时间： 2024-10-27 05:36:07

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描述
200V N-Channel MOSFET

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数据手册

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HFW640 数据手册

Mar 2008

BV_DSS= 200 V

_{DS(on) typ}= 0.145Ω

HFW640 / HFI640

200V N-Channel MOSFET

I_D= 18 A

D²-PAK I²-PAK

FEATURES

 Originative New Design

HFW640

HFI640

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 37 nC (Typ.)

 Extended Safe Operating Area

 Lower R_DS(ON): 0.145 Ω (Typ.) @V_GS=10V

 100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

200

I_D

– Continuous (T_C= 25℃)

– Continuous (T_C= 100℃)

Drain Current

11.4

I_DM

V_GS

E_AS

I_AR

Drain Current

– Pulsed

(Note 1)

Gate-Source Voltage

±30

250

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

13.9

5.5

V/ns

Power Dissipation (T_A= 25℃)

Power Dissipation (T_C= 25℃)

3.13

139

- Derate above 25℃

1.11

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

Junction-to-Case

0.9

R_{θ JA}

R_θJA

Junction-to-Ambient*

Junction-to-Ambient

℃/W

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

◎ SEMIHOW REV.A0,Mar 2008

12 3 4 5 6 7 8

中文翻译

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