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HFU2N90 PDF预览

HFU2N90

更新时间: 2024-11-11 01:16:07
品牌 Logo 应用领域
SEMIHOW /
页数 文件大小 规格书
9页 251K
描述
900V N-Channel MOSFET

HFU2N90 数据手册

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Feb 2014  
BVDSS = 900 V  
RDS(on) typ  ꢀꢀꢁꢂꢃꢀȍ  
HFD2N90/HFU2N90  
900V N-Channel MOSFET  
ID = 2.0 A  
D-PAK  
I-PAK  
2
FEATURES  
1
1
3
2
3
‰ Originative New Design  
HFD2N90  
HFU2N90  
‰ Superior Avalanche Rugged Technology  
‰ Robust Gate Oxide Technology  
‰ Very Low Intrinsic Capacitances  
‰ Excellent Switching Characteristics  
‰ Unrivalled Gate Charge : 17 nC (Typ.)  
‰ Extended Safe Operating Area  
‰ Lower RDS(ON) ꢄꢀꢀꢁꢂꢃꢀȍꢀꢅ7\Sꢂꢆꢀ#9GS=10V  
‰ 100% Avalanche Tested  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
V
VDSS  
Drain-Source Voltage  
Drain Current  
900  
2.0  
ID  
– Continuous (TC = 25ఁ͚͑  
– Continuous (TC = 100ఁ͚͑  
A
Drain Current  
1.3  
A
IDM  
VGS  
EAS  
IAR  
Drain Current  
– Pulsed  
(Note 1)  
8.0  
A
Gate-Source Voltage  
ρ30  
170  
2.0  
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.0  
mJ  
V/ns  
4.5  
Power Dissipation (TA = 25) *  
Power Dissipation (TC = 25ఁ͚͑  
2.5  
70  
W
W
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑  
0.56  
W/ఁ͑  
ఁ͑  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
300  
ఁ͑  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RșJC  
RșJA  
Junction-to-Case  
--  
1.78  
50  
Junction-to-Ambient*  
Junction-to-Ambient  
--  
--  
ఁ͠Έ͑  
110  
RșJA  
* When mounted on the minimum pad size recommended (PCB Mount)  
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡  

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