Datasheet > HFU2N90

HFU2N90

更新时间： 2022-02-26 12:42:04

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
9页	251K
描述
900V N-Channel MOSFET

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数据手册

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HFU2N90 数据手册

Feb 2014

BV_DSS= 900 V

R_{DS(on) typ} ꢀꢀꢁꢂꢃꢀȍ

HFD2N90/HFU2N90

900V N-Channel MOSFET

I_D= 2.0 A

D-PAK

I-PAK

FEATURES

Originative New Design

HFD2N90

HFU2N90

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 17 nC (Typ.)

Extended Safe Operating Area

Lower R_DS(ON)ꢄꢀꢀꢁꢂꢃꢀȍꢀꢅ7\Sꢂꢆꢀ#9_GS=10V

100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25୅ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

900

2.0

I_D

– Continuous (T_C= 25ఁ͚͑

– Continuous (T_C= 100ఁ͚͑

Drain Current

1.3

I_DM

V_GS

E_AS

I_AR

Drain Current

– Pulsed

(Note 1)

8.0

Gate-Source Voltage

ρ30

170

2.0

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.0

V/ns

4.5

Power Dissipation (T_A= 25ఁ) *

Power Dissipation (T_C= 25ఁ͚͑

2.5

͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑

0.56

W/ఁ͑

ఁ͑

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

ఁ͑

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_șJC

R_șJA

Junction-to-Case

1.78

Junction-to-Ambient*

Junction-to-Ambient

ఁ͠Έ͑

110

R_șJA

* When mounted on the minimum pad size recommended (PCB Mount)

క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡

12 3 4 5 6 7...9

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