Datasheet > HFD6N70U

HFD6N70U

更新时间： 2024-11-12 01:20:47

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
10页	457K
描述
700V N-Channel MOSFET

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中文翻译

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数据手册

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HFD6N70U 数据手册

August 2015

BV_DSS= 700 V

R_{DS(on) typ} ꢀꢀꢁꢂꢃꢀȍ

HFD6N70U / HFU6N70U

700V N-Channel MOSFET

I_D= 4.8 A

D-PAK

I-PAK

FEATURES

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 16.0 nC (Typ.)

Extended Safe Operating Area

Lower R_DS(ON)ꢄꢀꢀꢁꢂꢃꢀȍꢀꢅ7\Sꢂꢆꢀ#9_GS=10V

100% Avalanche Tested

HFD6N70U

HFU6N70U

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25୅ unless otherwise specified

Symbol

V_DSS

Parameter

Value

Units

Drain-Source Voltage

Drain Current

700

4.8

– Continuous (T_C= 25୅)

– Continuous (T_C= 100୅)

I_D

Drain Current

3.0

(Note 1)

I_DM

Drain Current

– Pulsed

19.2

ρ30

170

4.8

V_GS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25୅)*

Power Dissipation (T_C= 25୅)

9.5

V/ns

4.5

2.5

P_D

- Derate above 25୅

Operating and Storage Temperature Range

0.76

W/୅

୅

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

୅

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_șJC

R_șJA

Junction-to-Case

1.31

Junction-to-Ambient*

Junction-to-Ambient

୅/W

110

* When mounted on the minimum pad size recommended (PCB Mount)

క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͧ͝ͲΦΘΦΤΥ͑ͣͦ͑͢͡

12 3 4 5 6 7...10

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