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HFA50PA60CPBF

更新时间： 2024-11-21 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 210K
描述
HEXFRED® Ultrafast Soft Recovery Diode, 2 x 25 A

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中文翻译

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HFA50PA60CPBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-247AC
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：compliantHTS代码：8541.10.00.80
风险等级：5.56Is Samacsys：N
其他特性：LOW NOISE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：225 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：25 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE最大功率耗散：150 W
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.075 µs子类别：Rectifier Diodes
表面贴装：NO端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

HFA50PA60CPBF 数据手册

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HFA50PA60CPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 25 A  
FEATURES  
• Ultrafast recovery  
Pb-free  
• Ultrasoft recovery  
• Very low IRRM  
common  
Base  
Available  
RoHS*  
cathode  
• Very low Qrr  
• Specified at operating conditions  
COMPLIANT  
2
• Lead (Pb)-free  
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
3
TO-247AC  
Anode  
1
Anode  
2
2
Common  
cathode  
DESCRIPTION  
HFA50PA60C is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 25 A per leg continuous  
current, the HFA50PA60C is especially well suited for use as  
the companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA50PA60C is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
VF at 25 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
2 x 25 A  
23 ns  
t
rr (typical)  
TJ (maximum)  
rr (typical)  
dI(rec)M/dt (typical) at 125 °C  
RRM (typical)  
150 °C  
112 nC  
160 A/µs  
4.5 A  
Q
I
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
Maximum continuous forward current  
per device  
25  
IF  
TC = 100 °C  
50  
225  
A
Single pulse forward current  
IFSM  
IFRM  
Maximum repetitive forward current  
100  
TC = 25 °C  
150  
Maximum power dissipation  
PD  
W
TC = 100 °C  
60  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94074  
Revision: 25-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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