Datasheet > HFA08SD60STR-M3

HFA08SD60STR-M3

更新时间： 2024-11-29 10:47:43

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	138K
描述
HEXFRED Ultrafast Soft Recovery Diode, 8 A

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HFA08SD60STR-M3 数据手册

VS-HFA08SD60S-M3

Vishay Semiconductors

HEXFRED^®Ultrafast Soft Recovery Diode, 8 A

FEATURES

• Ultrafast recovery time

• Ultrasoft recovery

2, 4

• Very low I_RRM

• Very low Q_rr

• Guaranteed avalanche

• Specified at operating conditions

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21

definition

N/C

Anode

D-PAK (TO-252AA)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

PRODUCT SUMMARY

BENEFITS

Package

D-PAK (TO-252AA)

8 A

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

I_F(AV)

V_R

600 V

V_Fat I_F

1.7 V

• Reduced parts count

_rrtyp.

18 ns

DESCRIPTION

T_Jmax.

150 °C

These diodes are optimized to reduce losses and EMI/RFI in

high frequency power conditioning systems. The softness of

the recovery eliminates the need for a snubber in most

applications. These devices are ideally suited for

freewheeling, flyback, power converters, motor drives, and

other applications where high speed and reduced switching

losses are design requirements.

Diode variation

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

T_C= 100 °C

I_FSM

Peak repetitive forward current

Maximum power dissipation

I_FRM

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

600

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

1.4

1.7

1.4

0.3

100

1.7

2.1

1.7

5.0

500

Forward voltage

V_F

I_F= 16 A

See fig. 1

See fig. 3

I_F= 8 A, T_J= 125 °C

V_R= V_Rrated

Maximum reverse

leakage current

I_R

μA

T_J= 125 °C, V_R= 0.8 x V_Rrated

V_R= 200 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Document Number: 93474

Revision: 31-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与HFA08SD60STR-M3相关器件

型号	品牌	获取价格	描述	数据表
HFA08SD60STRPBF	VISHAY	获取价格	HEXFREDÂ® Ultrafast Soft Recovery Diode, 8 A
HFA08SD60STRR	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, SMD-220, DPAK-3
HFA08SD60STRR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, SMD-220, DPAK-3
HFA08SD60STRRPBF	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, SMD-220, DPAK-3
HFA08SD60STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, SMD-220, DPAK-3
HFA08SD60TR	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08SD60TRL	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08SD60TRLPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08SD60TRPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08SD60TRR	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A

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