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HER803SR

更新时间: 2024-11-02 19:52:07
品牌 Logo 应用领域
RECTRON 功效二极管
页数 文件大小 规格书
2页 24K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, D2PAK-3

HER803SR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.66
其他特性:LOW NOISE应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HER803SR 数据手册

 浏览型号HER803SR的Datasheet PDF文件第2页 
HER801S  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HER805S  
HIGH EFFICIENCY RECTIFIER  
VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* Low thermal resistance  
* High current capability  
* High fast switching capability  
* High surge capability  
D2PAK  
MECHANICAL DATA  
* Case: D2PAK molded plastic  
.189 (4.80)  
.173 (4.40)  
.053 (1.35)  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.049 (1.25)  
* Weight: 2.2 grams  
.055 (1.40)  
.047 (1.20)  
.036 (0.91)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
.202 (5.13)  
.198 (5.03)  
.028 (0.71)  
.412 (10.46)  
.388 (9.86)  
.020 (0.50)  
.012 (0.30)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
HER801S HER802S HER803S HER804S HER805S  
SYMBOL  
UNITS  
Volts  
Volts  
Volts  
V
V
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
RMS  
V
DC  
O
100  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
at TC  
= 75oC  
I
8.0  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
200  
Amps  
R θ J C  
Typical Thermal Resistance  
2.5  
40  
0C/W  
pF  
0 C  
CJ  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
T
J
, TSTG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
HER803S  
HER801S HER802S  
1.0  
HER804S HER805S  
1.3  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 8.0A DC  
VF  
@T  
@T  
C
C
= 25oC  
= 100oC  
Maximum DC Reverse Current  
10  
150  
50  
I
R
uAmps  
nSec  
at Rated DC Blocking Voltage  
Maximum Reverse Recovery Time (Note 1)  
trr  
2003-1  
NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR =- 0.25A  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
3. Suffix “R” for Reverse Polarity.  

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