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HER801G_1 PDF预览

HER801G_1

更新时间: 2024-11-11 04:21:07
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管
页数 文件大小 规格书
2页 184K
描述
8.0 AMPS. Glass Passivated High Efficient Rectifiers

HER801G_1 数据手册

 浏览型号HER801G_1的Datasheet PDF文件第2页 
HER801G - HER808G  
8.0 AMPS. Glass Passivated High Efficient Rectifiers  
R-6  
Features  
Glass passivated chip junction.  
High efficiency, Low VF  
High current capability  
High reliability  
High surge current capability  
For use in low voltage, high frequency inventor, free  
wheeling, and polarity protection application.  
Mechanical Data  
Case: Molded plastic  
Epoxy: UL 94V0 rate flame retardant  
Lead: Pure tin plated, lead free, solderable per  
MIL-STD-202, Method 208 guaranteed  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
Dimensions in inches and (millimeters)  
o
260 C/10 seconds/.375”,(9.5mm) lead  
lengths at 5 lbs., (2.3kg) tension  
Mounting position: Any  
Weight: 1.65 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HER HER HER HER HER HER HER HER  
Symbol  
Type Number  
Units  
801G 802G 803G 804G 805G 806G 807G 808G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50 100 200 300 400 600 800 1000  
35 70 140 210 280 420 560 700  
V
V
V
Maximum DC Blocking Voltage  
50 100 200 300 400 600 800 1000  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
8.0  
A
I(AV)  
o
@TA = 55 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
150  
A
V
IFSM  
Maximum Instantaneous Forward Voltage  
@ 8.0A  
1.0  
1.3  
1.7  
VF  
Maximum DC Reverse Current  
o
@TA=25 C at Rated DC Blocking Voltage  
10  
uA  
uA  
IR  
o
@ TA=125 C  
400  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Operating Temperature Range  
Trr  
Cj  
50  
100  
80  
65  
nS  
pF  
o
TJ  
-65 to +150  
-65 to +150  
C
o
Storage Temperature Range  
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
Notes:  
Version: A06  

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