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HER608GP-AP PDF预览

HER608GP-AP

更新时间: 2024-11-11 13:08:19
品牌 Logo 应用领域
美微科 - MCC 整流二极管高效整流二极管功效
页数 文件大小 规格书
2页 93K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon,

HER608GP-AP 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.22
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:1000 V
最大反向电流:10 µA最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

HER608GP-AP 数据手册

 浏览型号HER608GP-AP的Datasheet PDF文件第2页 
M C C  
HER601  
THRU  
HER608  
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21201 Itasca Street Chatsworth  
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Features  
·
·
·
·
High Surge Current Capability  
High Reliability  
6.0 Amp High  
Efficient Rectifiers  
50 to 1000 Volts  
Low Forward Voltage Drop  
High Current Capability  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
For capacitive load, derate current by 20%  
R-6  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
HER601  
HER602  
HER603  
HER604  
HER605  
HER606  
HER607  
HER608  
---  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
D
100V  
200V  
300V  
400V  
600V  
800V  
1000V  
100V  
140V  
210V  
280V  
420V  
560V  
700V  
200V  
300V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
Average Forward  
Current  
IF(AV)  
6 A  
TA = 55°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
HER601-604  
VF  
IR  
1.1V  
1.3V  
1.7V  
IFM = 6.0A;  
TA = 25°C  
HER605  
HER606-608  
Reverse Current At  
Rated DC Blocking  
Voltage (Maximum DC)  
Maximum Reverse  
Recovery Time  
HER601-605  
HER606-608  
Typical Junction  
Capacitance  
10mA  
200mA TA = 100°C  
TA = 25°C  
DIMENSIONS  
INCHES  
MIN  
.340  
.340  
.048  
MM  
MIN  
8.60  
8.60  
1.20  
25.40  
DIM  
A
B
C
D
MAX  
.360  
.360  
.052  
---  
MAX  
9.10  
9.10  
1.30  
---  
NOTE  
1.000  
Trr  
CJ  
50ns  
75ns  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
HER601-605  
100pF Measured at  
HER606-608  
65pF 1.0MHz, VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

HER608GP-AP 替代型号

型号 品牌 替代类型 描述 数据表
HER608-TP MCC

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Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R
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Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R

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