Datasheet > HER504G

HER504G

更新时间： 2024-11-11 04:21:07

品牌	Logo	应用领域
TSC		整流二极管高效整流二极管
页数	文件大小	规格书
2页	191K
描述
5.0 AMP. Glass Passivated High Efficient Rectifiers

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HER504G 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.62	Base Number Matches：	1

HER504G 数据手册

HER501G - HER508G

5.0 AMP. Glass Passivated High Efficient Rectifiers

DO-201AD

Features

ꢀ

Glass passivated chip junction.

High efficiency, Low VF

High current capability

High reliability

High surge current capability

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application.

Mechanical Data

ꢀ

Cases: Molded plastic

Epoxy: UL 94V0 rate flame retardant

Lead: Pure tin plated, lead free, solderable per

MIL-STD-202, method 208 guaranteed

Polarity: Color band denotes cathode

High temperature soldering guaranteed:

ꢀ

260 C/10 seconds/.375”,(9.5mm) lead

Dimensions in inches and (millimeters)

lengths at 5 lbs., (2.3kg) tension

Weight: 1.65grams

ꢀ

Maximum Rating and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

HER HER HER HER HER HER HER HER

Symbol

Units

Type Number

501G 502G 503G 504G 505G 506G 507G 508G

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMD

V_DC

50 100 200 300 400 600 800 1000

35 70 140 210 280 420 560 700

Maximum DC Blocking Voltage

50 100 200 300 400 600 800 1000

Maximum Average Forward Rectified

Current .375 (9.5mm) lead length

I_(AV)

5.0

@T_A= 55 C

Peak Forward Surge Current, 8.3 ms single

half sine-wave superimposed on rated load

(JEDEC method )

I_FSM

200

Maximum Instantaneous Forward Voltage

@5.0A

1.0

1.3

1.7

Maximum DC Reverse Current

@Ta=25 C at Rated DC Blocking Voltage

@ Ta=125 C

200

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance

Trr

100

R_θJA

T_J

C/W

Operating Temperature Range

-65 to +150

Storage Temperature Range

STG

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.C.

3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.

Notes:

Version: A06

中文翻译

下载PDF

与HER504G相关器件

型号	品牌	获取价格	描述	数据表
HER504GL-Z21D-B	UTC	获取价格	HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS
HER504GP-AP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
HER504GP-AP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
HER504GP-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
HER504GPT	CHENMKO	获取价格	HIGH EFFICIENCY RECTIFIER
HER504GP-Z21D-B	UTC	获取价格	HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS
HER504GR	SECOS	获取价格	Voltage 50 ~ 1000 V 5Amp Glass Passivated High Efficiency Rectifiers
HER504H31-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
HER504H32	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
HER504H32-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,

与HER504G相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

HER504G

HER504G 技术参数

HER504G 数据手册

与HER504G相关器件

与HER504G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HER504G

HER504G 技术参数

HER504G 数据手册

与HER504G相关器件

与HER504G相关文章

您还可以找

您在本页遇到什么问题？