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HER304(G) PDF预览

HER304(G)

更新时间: 2024-11-07 14:53:07
品牌 Logo 应用领域
鲁光 - LGE 整流二极管高效整流二极管
页数 文件大小 规格书
2页 776K
描述
高效整流二极管

HER304(G) 技术参数

Case Style:DO-27Maximum average forward rectified current:3
Maximum recurrent peak reverse voltage:300Peak forward surge current:200
Maximum instantaneous forward voltage:1.3Maximum reverse current:10
TRR(nS):50class:Diodes

HER304(G) 数据手册

 浏览型号HER304(G)的Datasheet PDF文件第2页 
HER301G-HER308G  
3.0 AMP. Glass Passivated High Efficient Rectifiers  
DO-201AD  
Features  
Glass passivated chip junction.  
High efficiency, Low VF  
High current capability  
High reliability  
High surge current capability  
For use in low voltage, high frequency inventor, free  
wheeling, and polarity protection application.  
Mechanical Data  
Case: Molded plastic  
Epoxy: UL 94V0 rate flame retardant  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead  
Dimensions in inches and (millimeters)  
lengths at 5 lbs., (2.3kg) tension  
Mounting position: Any  
Weight: 1.2 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HER HER HER HER HER HER HER HER  
Symbol  
Type Number  
Units  
308G  
301G 302G 303G 304G 305G 306G 307G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50 100 200 300 400 600 800 1000  
35 70 140 210 280 420 560 700  
V
V
V
Maximum DC Blocking Voltage  
50 100 200 300 400 600 800 1000  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
I(AV)  
3.0  
A
o
@TA = 55 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
125  
A
V
Maximum Instantaneous Forward Voltage  
@ 3.0A  
VF  
1.0  
1.3  
1.7  
Maximum DC Reverse Current  
o
@TA=25 C at Rated DC Blocking Voltage  
IR  
10  
uA  
uA  
o
@ TA=125 C  
200  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Trr  
Cj  
50  
60  
75  
35  
nS  
pF  
RθJA  
35  
10  
o
C/W  
R
θJL  
o
Operating & Storage Temperature Range  
TJ /TSTG  
-65 to +150  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B  
Notes:  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170301-P1  

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