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HER2010FCR

更新时间： 2024-11-06 02:50:19
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THINKISEMI /
页数 文件大小 规格书
2页 273K
描述
20.0 Ampere Insulated Dual Doubler Polarity High Efficiency Rectifiers

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HER2010FCR 数据手册

 浏览型号HER2010FCR的Datasheet PDF文件第2页 
HER2002FCR thru HER2012FCR  
HER2002FCR-HER2012FCR  
Pb Free Plating Product  
20.0 Ampere Insulated Dual Doubler Polarity High Efficiency Rectifiers  
ITO-220AB/TO-220F-3L  
Unit:inch(mm)  
Features  
※ ThinkiSemi latest&matured process FRD/FRED  
※ Low forward voltage drop  
※ High current capability  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
※ Low reverse leakage current  
※ High surge current capability  
Application  
※ Automotive Inverters and Solar Inverters  
※ Car Audio Amplifiers and Sound Device Systems  
※ Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
※Case:Isolated fully plastic ITO-220AB/TO-220F-3L package  
※ Epoxy: UL 94V-0 rate flame retardant  
※ Terminals: Solderable per MIL-STD-202 method 208  
※ Polarity: As marked on diode body  
※ Mounting position: Any  
(2.55)  
※ Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "FCR"  
Tandem Polarity  
Suffix "FCL"  
Common Cathode  
Suffix "FCT"  
Common Anode  
Suffix "FCA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER2003FCR  
HER2004FCR  
PARAMETER  
HER2010FCR HER2012FCR  
SYMBOL  
HER2006FCR HER2008FCR  
UNIT  
HER2002FCR  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
20.0  
200  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x10.0A=20.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@10.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.30-1.70  
0.85-1.00  
1.00-1.30  
1.30-1.70  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35-50  
50-75  
Trr  
CJ  
nS  
pF  
100  
3.0  
RθJC  
℃/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
12

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