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HER2004A

更新时间: 2024-11-02 00:56:43
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THINKISEMI /
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2页 622K
描述
20.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers

HER2004A 数据手册

 浏览型号HER2004A的Datasheet PDF文件第2页 
HER2001A thru HER2008A  
HER2001A thru HER2008A  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers  
TO-220AB/TO-220-3L  
Unit : inch (mm)  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
Negative  
Common Cathode Common Anode  
Suffix "C" Suffix "A"  
Positive  
Doubler  
Series  
Tandem Polarity  
Tandem Polarity  
Weight: 2.2 gram approximately  
Suffix "D"  
Suffix "S"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
HER  
2001A  
50  
HER  
2002A  
100  
70  
HER  
2003A  
200  
HER  
2004A  
300  
HER  
2005A  
400  
HER  
HER  
2007A  
800  
HER  
PARAMETER  
SYMBOL  
UNIT  
2006A  
600  
2008A  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
35  
140  
210  
280  
420  
560  
Maximum DC blocking voltage  
50  
100  
200  
300  
400  
600  
800  
1000  
Maximum average forward rectified current(total device)  
IF(AV)  
20  
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
200  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 10 A(per leg)  
VF  
1.0  
1.3  
1.7  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
5.0  
IR  
μA  
100  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Typical thermal resistance  
trr  
CJ  
50  
80  
80  
50  
ns  
pF  
RθJC  
TJ  
1.5  
°C/W  
°C  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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