Datasheet > HER157(G)

HER157(G)

更新时间： 2024-10-30 14:52:43

品牌	Logo	应用领域
鲁光 - LGE		整流二极管高效整流二极管
页数	文件大小	规格书
2页	1522K
描述
高效整流二极管

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HER157(G) 技术参数

Case Style：	DO-15	Maximum average forward rectified current：	1.5
Maximum recurrent peak reverse voltage：	800	Peak forward surge current：	50
Maximum instantaneous forward voltage：	1.7	Maximum reverse current：	5.0
TRR(nS)：	75	class：	Diodes

HER157(G) 数据手册

HER151G-HER158G

1.5 AMP. Glass Passivated High Efficient Rectifiers

DO-15

Features

ꢀ

Glass passivated chip junction.

High efficiency, Low VF

High current capability

High reliability

High surge current capability

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application.

Mechanical Data

ꢀ

Case: Molded plastic DO-15

Epoxy: UL 94V0 rate flame retardant

Polarity: Color band denotes cathode

High temperature soldering guaranteed:

260 C/10 seconds/.375”,(9.5mm) lead

Dimensions in inches and (millimeters)

lengths at 5 lbs., (2.3kg) tension

Mounting position: Any

Weight: 0.40 gram

ꢀ

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

HER HER HER HER HER HER HER

HER

Symbol

Type Number

Units

158G

151G 152G 153G 154G 155G 156G 157G

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

50 100 200 300 400 600 800 1000

35 70 140 210 280 420 560 700

Maximum DC Blocking Voltage

50 100 200 300 400 600 800 1000

Maximum Average Forward Rectified

Current .375 (9.5mm) Lead Length

I_(AV)

1.5

@T_A= 55 C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

@ 1.5A

V_F

1.0

1.7

1.3

Maximum DC Reverse Current

@T_A=25 C at Rated DC Blocking Voltage

I_R

5.0

@ T_A=125 C

150

Maximum Reverse Recovery Time ( Note 1)

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance

Trr

C/W

θJA

Operating Temperature Range

T_J

-65 to +150

Storage Temperature Range

T_STG

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.

Notes:

http://www.lgesemi .com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

下载PDF

与HER157(G)相关器件

型号	品牌	获取价格	描述	数据表
HER157.1.5A-2CDO-15	DGNJDZ	获取价格	1.5 AMP HIGH EFFICIENCY RECTIFIERS
HER157-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PL
HER157G	MIC	获取价格	HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
HER157G	PINGWEI	获取价格	HIGH EFFICIENCY PLASTIC RECTIFIER
HER157G	GOOD-ARK	获取价格	Glass Passivated High Efficient Rectifiers
HER157G	GULFSEMI	获取价格	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIE
HER157G	DACHANG	获取价格	Plastic High-Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A
HER157G	TSC	获取价格	1.5 AMPS. Glass Passivated High Efficient Rectifiers
HER157G	DAESAN	获取价格	CURRENT 1.5 Amperes VOLTAGE 50 to 1000 Volts
HER157G	UNIOHM	获取价格	1.5 AMP GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

与HER157(G)相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

18
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

42
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

49

产品中心

服务支持

精选活动

关于我们

帮助中心

HER157(G)

HER157(G) 技术参数

HER157(G) 数据手册

与HER157(G)相关器件

与HER157(G)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HER157(G)

HER157(G) 技术参数

HER157(G) 数据手册

与HER157(G)相关器件

与HER157(G)相关文章

您还可以找

您在本页遇到什么问题？