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HER105GT-G PDF预览

HER105GT-G

更新时间: 2024-10-29 07:18:03
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管高效整流二极管
页数 文件大小 规格书
4页 84K
描述
High Efficiency Rectifiers

HER105GT-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 V元件数量:1
最高工作温度:150 °C最大输出电流:1 A
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO

HER105GT-G 数据手册

 浏览型号HER105GT-G的Datasheet PDF文件第2页浏览型号HER105GT-G的Datasheet PDF文件第3页浏览型号HER105GT-G的Datasheet PDF文件第4页 
High Efficiency Rectifiers  
HER101G-G Thru. HER108G-G  
Voltage: 50 to 1000 V  
Current: 1.0 A  
RoHS Device  
DO-41  
Features  
-Glass passivated chip.  
-Low forward voltage.  
-High reliability.  
1.000(25.40) Min.  
-High surge current capability.  
-High speed switching.  
0.205(5.21)  
0.165(4.19)  
Mechanical data  
0.117(2.97) DIA.  
0.090(2.29) DIA.  
-Case: JEDEC DO-41 molded plastic.  
-Epoxy: UL 94V-0 rate flame retardant.  
-Polarity: Color band denotes cathode end.  
-Lead: Solderable per MIL-STD-202,  
method 208 guaranteed.  
1.000(25.40) Min.  
0.033(0.84) DIA.  
0.028(0.71) DIA.  
Dimensions in inches and (millimeter)  
-Mounting position: Any  
-Weight: 0.321 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER  
HER  
HER  
HER  
HER  
HER  
HER  
HER  
Symbol  
Parameter  
Unit  
101G-G 102G-G 103G-G 104G-G 105G-G 106G-G 107G-G 108G-G  
Maximum repetitive peak reverse voltage  
@IT = 5μA  
V
RRM  
RMS  
50  
100  
200  
300  
400  
600  
800  
1000  
V
Maximum RMS voltage  
V
35  
50  
70  
140  
200  
210  
300  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
Maximum average forward rectified current  
V
DC  
100  
1000  
I(AV)  
1.0  
5.0  
A
V
@T =25°C  
A
Maximum instantaneous forward  
voltage at specified current  
V
F
1.0  
1.3  
1.7  
μA  
ns  
°C  
°C  
Maximum DC reverse current  
Maximum reverse recovery time (Note 1)  
Operating temperature range  
Storage temperature range  
I
R
t
rr  
50  
75  
T
J
-55 ~ +150  
-55 ~ +150  
T
STG  
NOTES:  
1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A(RGI circuit)  
REV:A  
Page 1  
QW-BU010  
Comchip Technology CO., LTD.  

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