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HEF4050BT-Q100 PDF预览

HEF4050BT-Q100

更新时间: 2024-11-05 11:11:39
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
11页 754K
描述
Hex non-inverting buffersProduction

HEF4050BT-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.69
系列:4000/14000/40000JESD-30 代码:R-PDSO-G16
长度:9.9 mm逻辑集成电路类型:BUFFER
湿度敏感等级:1功能数量:6
输入次数:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260传播延迟(tpd):110 ns
筛选级别:AEC-Q100座面最大高度:1.75 mm
最大供电电压 (Vsup):15 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

HEF4050BT-Q100 数据手册

 浏览型号HEF4050BT-Q100的Datasheet PDF文件第2页浏览型号HEF4050BT-Q100的Datasheet PDF文件第3页浏览型号HEF4050BT-Q100的Datasheet PDF文件第4页浏览型号HEF4050BT-Q100的Datasheet PDF文件第5页浏览型号HEF4050BT-Q100的Datasheet PDF文件第6页浏览型号HEF4050BT-Q100的Datasheet PDF文件第7页 
HEF4050B-Q100  
Hex non-inverting buffers  
Rev. 2 — 15 June 2016  
Product data sheet  
1. General description  
The HEF4050B-Q100 provides six non-inverting buffers with high current output capability  
suitable for driving TTL or high capacitive loads. Voltages in excess of the buffer supply  
voltage are permitted. This feature allows the buffers to be used to convert logic levels of  
up to 15 V to standard TTL levels. Their guaranteed fan-out into common bipolar logic  
elements is shown in Table 3.  
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS  
(usually ground). Unused inputs must be connected to VDD, VSS, or another input.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 3) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 3)  
Specified from 40 C to +85 C  
Accepts input voltages in excess of the supply voltage  
Fully static operation  
5 V, 10 V, and 15 V parametric ratings  
Standardized symmetrical output characteristics  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
Complies with JEDEC standard JESD 13-B  
3. Applications  
LOCMOS (Local Oxidation CMOS) to DTL/TTL converter  
HIGH sink current for driving two TTL loads  
HIGH-to-LOW level logic conversion  

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