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HDMIULC6-2X6 PDF预览

HDMIULC6-2X6

更新时间: 2024-10-29 03:41:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
17页 752K
描述
Ultra large bandwidth ESD protection

HDMIULC6-2X6 数据手册

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HDMIULC6-2x6  
Ultra large bandwidth ESD protection  
Features  
2-line ESD protection (at 15 kV air and contact  
discharge, exceeds IEC 61000-4-2)  
Ultra low capacitance: 0.6 pF @ 825 MHz  
µQFN (pin view)  
HDMIULC6-2M6  
SOT-666  
HDMIULC6-2P6  
Ultra high bandwidth - no influence on signal  
rise and fall times - maximised number of signal  
harmonics  
Very low leakage current: 0.5 µA max.  
Complies with these standards  
Fast response time compared with varistors  
Protects V  
when applicable  
IEC 61000-4-2 level 4  
– 15 kV air discharge  
– 8 kV contact discharge  
BUS  
RoHS compliant  
Benefits  
MIL STD883G-Method 3015-7  
ESD standards compliance guaranteed at  
device level, thus greater immunity at system  
level  
Applications  
HDMI ports at 1.65 Gb/s and up to 3.2 Gb/s  
IEEE 1394a, b, or c up to 3.2 Gb/s  
USB 2.0 ports up to 480 Mb/s (Hi-Speed)  
Ethernet port: 10/100/1000 Mb/s  
Video line protection  
ESD protection of V  
when applicable.  
BUS  
High efficiency due to low residual voltage  
when confronted by an ESD surge  
Large bandwidth to minimize impact on data  
signal quality  
Consistent D+ / D- signal balance:  
– Ultra low impact on intra- and inter-pair  
skew  
Description  
The HDMIULC6-2x6 is a monolithic, application  
specific discrete device dedicated to ESD  
protection of the HDMI connection. It also offers  
the same high level of protection for IEEE 1394a  
and IEEE 1394b/c, USB 2.0, Ethernet links, and  
video lines.  
– Matching high bit rate HDMI requirements  
and ready for future evolution  
2
Low PCB space occupation - 1.45 mm  
for µQFN  
Low leakage current for longer operation of  
battery powered devices  
Its ultra high cutoff frequency (5.9 GHz) secures a  
high level of signal integrity. The device topology  
provides this integrity without compromising the  
complete protection of ICs against the most  
stringent ESD strikes.  
Higher reliability offered by monolithic  
integration  
500 µm pitch for µQFN 6 leads  
May 2008  
Rev 1  
1/17  
www.st.com  

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