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HDD32M64B8-10A PDF预览

HDD32M64B8-10A

更新时间: 2024-10-04 03:01:19
品牌 Logo 应用领域
HANBIT 存储动态存储器双倍数据速率
页数 文件大小 规格书
11页 162K
描述
DDR SDRAM Module 256Mbyte (32Mx64bit), based on32Mx8,4Banks, 8K Ref., SO-DIMM

HDD32M64B8-10A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:NBase Number Matches:1

HDD32M64B8-10A 数据手册

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HANBit  
HDD32M64B8  
DDR SDRAM Module 256Mbyte (32Mx64bit), based on32Mx8,4Banks,  
8K Ref., SO-DIMM  
Part No. HDD32M64B8  
GENERAL DESCRIPTION  
The HDD32M64B8 is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module.  
The module consists of eight CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K  
EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed  
circuit board in parallel for each DDR SDRAM. The HDD32M64B8 is a SO-DIMM(Small Outline Dual in line Memory  
Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible  
on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device  
to be useful for a variety of high bandwidth, high performance memory system applications. All module components may be  
powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.  
FEATURES  
Part Identification  
HDD32M64B8 10A  
HDD32M64B8 13A  
HDD32M64B8 13B  
:
:
:
100MHz (CL=2)  
133MHz (CL=2)  
133MHz (CL=2.5)  
256MB(32Mx64) Unbuffered DDR SO-DIMM based on 32Mx8 DDR SDRSM  
2.5V ± 0.2V VDD and VDDQ power supply  
Auto & self refresh capability (8192 Cycles/64ms)  
All input and output are compatible with SSTL_2 interface  
Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock  
All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock  
MRS cycle with address key programs  
- Latency (Access from column address) : 2, 2.5  
- Burst length : 2, 4, 8  
- Data scramble : Sequential & Interleave  
Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock  
All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock  
The used device is 8M x 8bit x 4Banks DDR SDRAM  
URL : www.hbe.co.kr  
REV 1.0 (August.2002)  
1
HANBit Electronics Co.,Ltd.  

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