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HD5020 PDF预览

HD5020

更新时间: 2024-11-10 20:56:15
品牌 Logo 应用领域
WTE 局域网二极管
页数 文件大小 规格书
2页 29K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 16V V(RRM), Silicon,

HD5020 数据手册

 浏览型号HD5020的Datasheet PDF文件第2页 
®
HD5020 & HD5024  
50A GLASS PASSIVATED AVALANCHE HITACHI TYPE PRESS-FIT DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Typical IR less than 200nA  
C-Band Terminal Construction  
Anode +  
C
12mm Hitachi  
Mechanical Data  
Dim  
A
Min  
11.80  
3.65  
Max  
12.00  
3.85  
D
Case: 12mm Hitachi Type Press-Fit  
B
Terminals: Contact Areas Readily Solderable  
Polarity: Cathode to Case (Reverse Units Are  
Available Upon Request and Are Designated  
By A “R” Suffix, i.e. HD5020R or HD5024R)  
Polarity: White Color Equals Standard,  
Black Color Equals Reverse Polarity  
C
1.35  
1.55  
B
D (+)*  
D (-)*  
18.00  
20.00  
22.00  
24.00  
A
All Dimensions in mm  
(+)*: Standard Polarity  
(-)*: Reverse Polarity  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
HD5020  
HD5024  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
16  
20  
V
Average Rectified Output Current  
@TC = 120°C  
IO  
50  
A
V
Breakdown Voltage Min.  
Breakdown Voltage Max.  
@IR = 100mA  
@IR = 100mA  
20  
26  
24  
32  
VBR  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
500  
A
Forward Voltage  
@IF = 50A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
200  
nA  
@TA = 25°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
CJ  
300  
1.2  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +175  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance: Junction to case, single side cooled.  
© Won-Top Electronics Co., Ltd.  
Revision: April, 2012  
www.wontop.com  
1

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