Datasheet > HD1L3N-AZ

HD1L3N-AZ

更新时间： 2024-01-28 02:50:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关晶体管
页数	文件大小	规格书
8页	514K
描述
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

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技术参数
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HD1L3N-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	POMM	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.31
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 2.12	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	60 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	200
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

HD1L3N-AZ 数据手册

DATA SHEET

COMPOUND TRANSISTOR

HD1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

High current drives such as IC outputs and actuators available

On-chip bias resistor

Low power consumption during drive

HD1 SERIES LISTS

Products

HD1A3M

HD1F3P

HD1L3N

HD1A4M

HD1L2Q

HD1F2Q

HD1A4A

Marking

R1 (kΩ)

1.0

R2 (kΩ)

1.0

2.2

4.7

0.47

0.22

−

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

VCBO

Ratings

Unit

VCEO

VEBO

IC(DC)

1.0

Note1

2.0

I^C(pulse)

IB(DC)

Note2

P^T

0.02

2.0

Total power dissipation

Junction temperature

Storage temperature

°C

Tstg

150

−55 to +150

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %

2. When 0.7 mm × 16 cm²ceramic board is used

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16182EJ4V0DS00 (4th edition)

Date Published August 2006 NS CP(K)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1 234 5 6 7 8

中文翻译

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与HD1L3N-AZ相关器件

型号	品牌	获取价格	描述	数据表
HD1L3N-T1	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
HD1L3N-T1-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
HD1L3N-T1-AZ	RENESAS	获取价格	on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
HD1L3N-T2	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
HD1L3N-T2-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
HD1L3N-T2-AZ	RENESAS	获取价格	on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
HD1P040-CSH2-10000	JAE	获取价格	Card Edge Connector
HD1P040MA1	ETC	获取价格	Board-to-Cable Connector for High-speed Transmission HD Series Connector
HD1P040MA1R6000	JAE	获取价格	Card Edge Connector
HD1S	YANGJIE	获取价格	MBS

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