DATASHEET
HCS00MS
Radiation Hardened Quad 2-Input NAND Gate
FN2138
Rev 2.00
August 1995
Features
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
• 3 Micron Radiation Hardened SOS CMOS
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
A1
B1
1
2
3
4
5
6
7
14 VCC
13 B4
12 A4
11 Y4
10 B3
Y1
A2
• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day
(Typ)
B2
Y2
9
8
A3
Y3
• Latch-Up Free Under Any Conditions
GND
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14
TOP VIEW
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
A1
B1
1
2
3
4
5
6
7
14
13
12
11
10
9
VCC
B4
A4
Y4
• Input Current Levels Ii 5A at VOL, VOH
Y1
A2
Description
B2
B3
A3
Y3
Y2
The Intersil HCS00MS is a Radiation Hardened Quad 2-
Input NAND Gate. A high on both inputs forces the output to
a Low state.
GND
8
The HCS00MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
TRUTH TABLE
INPUTS
OUTPUTS
The HCS00MS is supplied in a 14 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
An
Bn
L
Yn
H
L
L
H
L
H
H
H
H
Ordering Information
H
L
PART
NUMBER
TEMPERATURE SCREENING
RANGE LEVEL
NOTE: L = Logic Level Low, H = Logic level High
PACKAGE
HCS00DMSR
HCS00KMSR
-55oC to +125oC Intersil Class
S Equivalent
14 Lead SBDIP
Functional Diagram
An
-55oC to +125oC Intersil Class
S Equivalent
14 Lead Ceramic
Flatpack
(1, 4, 9, 12)
Yn
(3, 6, 8, 11)
HCS00D/
Sample
+25oC
+25oC
+25oC
Sample
Sample
Die
14 Lead SBDIP
Bn
HCS00K/
Sample
14 Lead Ceramic
Flatpack
(2, 5, 10, 13)
HCS00HMSR
Die
FN2138 Rev 2.00
August 1995
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