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HCPL-814-000E PDF预览

HCPL-814-000E

更新时间: 2024-11-03 21:55:11
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体光电晶体管光电晶体管输出元件输入元件
页数 文件大小 规格书
6页 85K
描述
AC Input Phototransistor Optocoupler High Density Mounting Type

HCPL-814-000E 数据手册

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Agilent HCPL-814  
AC Input Phototransistor  
Optocoupler  
High Density Mounting Type  
Data Sheet  
Features  
AC input response  
High input-output isolation voltage  
(V =5,000V  
)
rms  
iso  
Description  
The HCPL-814 contains a  
Ordering Information  
Specify Part Number followed by  
Option Number (if desired).  
Low collector dark current  
-7  
(I : max. 10 A at V = 20 V)  
CEO  
CE  
phototransistor, optically coupled  
to two light emitting diodes  
connected inverse parallel. It can  
operate directly by AC input  
current. It is packaged in a 4-pin  
DIP package and available in wide-  
lead spacing option and lead bend  
SMD option. Input-output isolation  
Current transfer ratio  
(CTR: min. 20% at I = ±1 mA,  
F
HCPL-814-XXXE  
V
= 5 V)  
CE  
Response time  
(t : typ. 4 µs at V = 2 V, I = 2 mA,  
Lead Free  
Option Number  
r
CE  
C
R =100)  
L
Compact dual-in-line package  
UL approved  
000 = No Options  
060 = IEC/EN/DIN EN 60747-5-2  
Option  
W00 = 0.4" Lead Spacing Option  
300 = Lead Bend SMD Option  
500 = Tape and Reel Packaging  
Option  
voltage is 5000 V . Response  
rms  
time, t , is typically 4 µs and  
r
CSA approved  
minimum CTR is 20% at input  
current of ± 1 mA.  
IEC/EN/DIN EN 60747-5-2  
approved  
Options available:  
– Leads with 0.4" (10.16 mm)  
spacing(W00)  
00A = Rank Mark A  
– Leads bend for surface  
mounting(300)  
– Tape and reel for SMD (500)  
– IEC/EN/DIN EN 60747-5-2  
approvals(060)  
Functional Diagram  
1
2
4
3
Applications  
Detecting or monitoring AC signals  
AC line/digital logic isolation  
Programmable logic controllers  
AC/DC – input modules  
1. ANODE, CATHODE  
2. CATHODE, ANODE  
3. EMITTER  
4. COLLECTOR  
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to  
prevent damage and/or degradation which may be induced by ESD.  

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