Datasheet > HC6856NQFCC60

HC6856NQFCC60

更新时间： 2024-11-12 03:06:27

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		/
页数	文件大小	规格书
12页	160K
描述
32K x 8 STATIC RAM

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HC6856NQFCC60 数据手册

Military & Space Products

32K x 8 STATIC RAM

HC6856

FEATURES

RADIATION

OTHER

• Fabricated with RICMOS^™IV Bulk

• Listed on SMD #5962-92153. Available as

MIL-PRF-38535 QML Class Q and Class V

0.8 µm Process (L_eff= 0.65 µm)

• Read/Write Cycle Times

• Total Dose Hardness through 1x10⁶rad(SiO₂)

• Neutron Hardness through 1x10¹⁴cm^-2

≤ 30 ns (Typical)

≤ 40 ns (-55 to 125°C)

• Standby Current of 20 µA (typical)

• Asynchronous Operation

• Dynamic and Static Transient Upset Hardness

through 1x10⁹rad(Si)/s

• Soft Error Rate of <1x10^-10upsets/bit-day

• Dose Rate Survivability through 1x10¹²rad(Si)/s

• Latchup Free

• CMOS or TTL Compatible I/O

• Single 5 V 10% Power Supply

• Packaging Options

- 36-Lead Flat Pack (0.630 in. x 0.650 in.)

- 28-Lead Flat Pack (0.530 in. x 0.720 in.)

- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened Static RAM is a high

performance 32,768 x 8-bit static random access memory

with industry-standard functionality. It is fabricated with

Honeywell’s radiation hardened technology, and is de-

signed for use in systems operating in radiation environ-

ments. The RAM operates over the full military temperature

range and requires only a single 5 V 10% power supply.

The RAM is available with either TTL or CMOS compatible

I/O. Power consumption is typically less than 50 mW/MHz

in operation, and less than 5 mW/MHz in the low power

disabled mode. The RAM read operation is fully asynchro-

nous, with an associated typical access time of 20 ns.

Honeywell’s enhanced RICMOS^™IV (Radiation Insensitive

CMOS)technologyisradiationhardenedthroughtheuseof

advancedandproprietarydesign,layout,andprocesshard-

ening techniques. The RICMOS^™IV process is a 5-volt,

twin-well CMOS technology with a 170 Å gate oxide and a

minimum drawn feature size of 0.8 µm (0.65 µm effective

gate length—L_eff). Additional features include a three layer

interconnect metalization and a lightly doped drain (LDD)

structure for improved short channel reliability. High resis-

tivitycross-coupledpolysiliconresistorshavebeenincorpo-

rated for single event upset hardening.

12 3 4 5 6 7...12

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