HB56EW472ETC-A Series,
HB56EW872ETK-A Series
32/64MB Buffered EDO DRAM DIMM
4-Mword × 72-bit, 4k Refresh, 1 Bank Module
(4 pcs of 4M × 16 & 2 pcs of 4M × 4 components)
8-Mword × 72-bit, 4k Refresh, 2 Bank Module
(8 pcs of 4M × 16 & 4 pcs of 4M × 4 components)
ADE-203-844 (Z)
Preliminary, Rev. 0.0
Nov. 14, 1997
Description
The HB56EW472ETC-A, HB56EW872ETK-A belong to 8 Byte DIMM (Dual In-line Memory Module)
family, and have been developed as an optimized main memory solution for 4 and 8 Byte processor
applications. The HB56EW472ETC-A is a 4M × 72 dynamic RAM module, mounted 4 pieces of 64-Mbit
DRAM (HM5165165A) sealed in TSOP package and 2 pieces of 16-Mbit DRAM (HM51W16405) sealed
in TSOP package, 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. The
HB56EW872ETK-A is a 8M × 72 dynamic RAM module, mounted 8 pieces of 64-Mbit DRAM
(HM5165165A) sealed in TSOP package and 4 pieces of 16-Mbit DRAM (HM51W16405) sealed in TSOP
package, 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. They offer Extended Data Out
(EDO) Page Mode as a high speed access mode. An outline of the HB56EW472ETC-A,
HB56EW872ETK-A is 168-pin socket type package (dual lead out). Therefore, the HB56EW472ETC-A,
HB56EW872ETK-A make high density mounting possible without surface mount technology. They
provide common data inputs and outputs. Decoupling capacitors are mounted TSOP on its module board.
Features
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168-pin socket type package (Dual lead out)
Lead pitch: 1.27 mm
Single 3.3 V supply: 3.3 V +0.3 V/–0.15 V (HB56EW472ETC-5AR, HB56EW872ETK-5AR)
3.3 V ± 0.3 V (HB56EW472ETC-6A/7A, HB56EW872ETK-6A/7A)
High speed
Access time: tRAC = 50 ns/60 ns /70 ns (max)
Access time: tCAC = 18 ns /20 ns /23 ns (max)
Low power dissipation
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Active mode:
3.92 W/3.20 W/2.77 W (max) (HB56EW472ETC-A Series)
3.96 W/3.31 mW/2.88 mW (max) (HB56EW872ETK-A Series)