Datasheet > HAZ10000-SRI

HAZ10000-SRI

更新时间： 2024-11-10 22:33:15

品牌	Logo	应用领域
莱姆 - LEM		传感器
页数	文件大小	规格书
2页	82K
描述
Current Transducers HAZ 4000~20000-SRI

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HAZ10000-SRI 数据手册

I_PN= 4000..20000 A

I_OUT= 0 - 20 mA

Current Transducers HAZ 4000..20000-SRI

For the electronic measurement of currents: DC, AC, pulsed, mixed,

with a galvanic isolation between the primary circuit (high power)

and the secondary circuit (electronic circuit).

Preliminary

Electrical data

Primarynominal

current

Primarycurrent

measuringrange

I_P(A)

Type

I_PN(A)

4000

6000

10000

12000

14000

20000

± 4000

± 6000

± 10000

± 12000

± 14000

± 20000

HAZ 4000-SRI

HAZ 6000-SRI

HAZ 10000-SRI

HAZ 12000-SRI

HAZ 14000-SRI

HAZ 20000-SRI

Features

· Hall effect measuring principle

· Galvanic isolation between primary

and secondary circuit

· True-rms, 0-20mA DC current output

· Isolation voltage 12kV~

· Low power consumption

V_C

I_C

I_OC

V_d

Supply voltage (± 5 %)

Current consumption

Overload capacity

R.m.s. voltage for AC isolation test, 60 Hz, 1 mn

R.m.s. rated voltage, safe separation

Isolation resistance @ 500 VDC

Output current @ ± I_PN, T_A= 25°C

Output internal resistance

Load resistance

± 15

± 50

30,000

2000¹⁾

> 1000

0-20

· Package in PBT meets UL 94-V0

V_b

R_IS

I_OUT

R_OUT

R_L

mA DC

Advantages

approx. 20

· Easy mounting

< 300

· Small size and space savings

· Only one design for wide current

ratings range

Accuracy - Dynamic performance data

Accuracy @ I_PN, T_A= 25°C (without offset)

Linearity ²⁾(0 .. ± I_PN)

Electrical offset current, T_A= 25°C

Residud offset current @ I_P= 0;

after an excursion of 1 x I_PN

< ± 1

< ± 1 % of I_PN

< ± 0.08 mA

· High immunity against external

interference

I_OE

I_OM

< ± 0.025 mA

< ± 0.05 %of I_N/K

< ± 0.05 %/K

< 400

DC .. 3

Applications

I_OT

Thermal drift of I_OE

TCe

Thermal drift of the gain (% of reading)

Arranging time constant

Frequency bandwidth ³⁾(- 3 dB)

· Battery supplied applications

· Uninterruptible Power Supplies

(UPS)

t_r

m s

kHz

· Power supplies for welding and

telecommunication applications.

General data

T_A

T_S

Ambient operating temperature

- 10 .. + 80 °C

- 25 .. + 80 °C

Ambient storage temperature

Mass

approx. 6

Standards

EN 50178

Minimum creepage & clearance

m m

Housing PBT 30% glassfiber

CTI IIIa, UL94-V0

Notes : Pollution class 2, overvoltage category III, reinforced insulation

Linearity data exclude the electrical offset.

Please refer to derating curves in the technical file to avoid excessive

core heating at high frequency

Please consult characterisation report for more technical details and

040713/0

application advice.

LEM Components

www.lem.com

中文翻译

下载PDF

与HAZ10000-SRI相关器件

型号	品牌	获取价格	描述	数据表
HAZ10000-SRU	LEM	获取价格	Current Transducers
HAZ101	VISHAY	获取价格	Ceramic High Voltage Disc Capacitors, Class 2
HAZ101BAKR	VISHAY	获取价格	Ceramic High Voltage Disc Capacitors, Class 2
HAZ101KBABF0KR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL
HAZ101KBABLCKR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL
HAZ101KBABRAKR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL
HAZ101KBABRBKR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL
HAZ101KBATCRKR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL
HAZ101MBABD0KR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL
HAZ101MBABF0KR	VISHAY	获取价格	CAP CER 100PF 1KV RADIAL

与HAZ10000-SRI相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

HAZ10000-SRI

HAZ10000-SRI 数据手册

与HAZ10000-SRI相关器件

与HAZ10000-SRI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HAZ10000-SRI

HAZ10000-SRI 数据手册

与HAZ10000-SRI相关器件

与HAZ10000-SRI相关文章

您还可以找

您在本页遇到什么问题？