是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | SOP |
包装说明: | 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.33 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 3.5 A |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.34 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 3 W | 最大脉冲漏极电流 (IDM): | 28 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 20 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
HAT1025R | RENESAS | Silicon P Channel Power MOS FET High Speed Power Switching |
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HAT1025R | HITACHI | Silicon P Channel Power MOS FET High Speed Power Switching |
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HAT1025REL | RENESAS | 4.5A, 20V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET |
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HAT1025R-EL-E | RENESAS | Silicon P Channel Power MOS FET High Speed Power Switching |
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HAT1026R | RENESAS | Silicon P Channel Power MOSFET High Speed Power Switching |
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HAT1026R | HITACHI | Silicon P Channel Power MOS FET High Speed Power Switching |
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