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HAT1026R PDF预览

HAT1026R

更新时间: 2024-02-20 22:24:48
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管脉冲电源开关光电二极管
页数 文件大小 规格书
7页 89K
描述
Silicon P Channel Power MOSFET High Speed Power Switching

HAT1026R 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknown风险等级:5.33
最大漏源导通电阻:0.065 ΩJESD-30 代码:R-PDSO-G8
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

HAT1026R 数据手册

 浏览型号HAT1026R的Datasheet PDF文件第2页浏览型号HAT1026R的Datasheet PDF文件第3页浏览型号HAT1026R的Datasheet PDF文件第4页浏览型号HAT1026R的Datasheet PDF文件第5页浏览型号HAT1026R的Datasheet PDF文件第6页浏览型号HAT1026R的Datasheet PDF文件第7页 
HAT1026R  
Silicon P Channel Power MOS FET  
High Speed Power Switching  
REJ03G1148-1000  
(Previous: ADE-208-457H)  
Rev.10.00  
Sep 07, 2005  
Features  
Low on-resistance  
Capable of 4 V gate drive  
Low drive current  
High density mounting  
Outline  
RENESAS Package code: PRSP0008DD-D  
(Package name: SOP-8 <FP-8DAV> )  
5 6 7 8  
D D D D  
5
6
7
8
1, 2, 3  
4
5, 6, 7, 8  
Source  
Gate  
Drain  
4
G
4
3
2
1
S S S  
1 2 3  
Rev.10.00 Sep 07, 2005 page 1 of 6  

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