Datasheet > HAL105TQ-I

HAL105TQ-I

更新时间： 2022-02-26 13:08:03

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描述
Hall-Effect Switch IC Family

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HAL105TQ-I 数据手册

DATA SHEET

HAL1xy

2.5. Characteristics

at T_J= −20 °C to +125 °C, V_DD= 3.8 V to 24 V, GND = 0 V

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for T_J= 25 °C and V_DD= 12 V.

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

Supply Current over

Temperature Range

1.6

5.2

Overvoltage Protection

at Supply

−

28.5

= 25 mA, T = 25 °C,

DD J

DDZ

t = 20 ms

I = 25 mA, T = 25 °C,

t = 20 ms

I = 20 mA

Overvoltage Protection at Output

Output Voltage over

Temperature Range

130

−

400

µA

Output Leakage Current over

Temperature Range

Output switched off,

T ≤150 °C, V = 3.8 to 24 V

Internal Oscillator Chopper

Frequency over Temperature

Range

−

kHz

µs

HAL10y, HAL11y

HAL104

osc

140

Enable Time of Output after

en(O)

Setting of V

Output Rise Time

Output Fall Time

−

400

= 12 V,

R = 820 Ohm,

C = 20 pF

SOT89B Package

Thermal Resistance

Measured with a 1s0p board

30 mm x 10 mm x 1.5 mm,

pad size (see Fig. 2–3)

Junction to Ambient

Junction to Case

−

212

K/W

thja

thjc

TO92UA Package

Thermal Resistance

Measured with a 1s0p board

Junction to Ambient

Junction to Case

−

225

K/W

thja

thjc

= 12 V, B > B + 2 mT or B < B

− 2 mT

OFF

1.80

1.05

1.45

2.90

1.05

0.50

1.50

Fig. 2–3: Recommended footprint SOT89B-3, Dimensions in mm

All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process.

Micronas

April 8, 2009; DSH000150_001EN

1...6 7 8910 11 12

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