Datasheet > HAL105TQ-I

HAL105TQ-I

更新时间： 2022-02-26 13:08:03

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描述
Hall-Effect Switch IC Family

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HAL105TQ-I 数据手册

HAL1xy

DATA SHEET

2.2. Positions of Sensitive Areas

SOT89B-3

TO92UA-6

0.95 mm nominal

0.33 mm nominal

1.08 mm nominal

0.30 mm nominal

2.3. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute

maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-

lute maximum-rated voltages to this high-impedance circuit.

All voltages listed are referenced to ground (GND).

Symbol

V_DD

V_O

Parameter

Pin Name

Min.

−15

−0.3

−

Max.

28¹⁾

Unit

Supply Voltage

Output Voltage

28¹⁾

I_O

Continuous Output On Current

Junction Temperature Range

50¹⁾

°C

T_J

−40

140²⁾

¹⁾as long as T_Jmax is not exceeded

²⁾t < 1000 h

2.4. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-

tics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.

All voltages listed are referenced to ground (GND).

Symbol

V_DD

I_O

Parameter

Pin Name

Min.

3.8

Max.

Unit

Comment

Supply Voltage

Continuous Output on Current

V_O

Output Voltage

(output switched off)

April 8, 2009; DSH000150_001EN

Micronas

1...5 6 789 10 11 12

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