Datasheet > H5N2522LS7

H5N2522LS7

更新时间： 2024-01-20 11:33:32

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	84K
描述
Silicon N Channel MOS FET High Speed Power Switching

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数据手册

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H5N2522LS7 数据手册

Preliminary Datasheet

H5N2522LS

Silicon N Channel MOS FET

High Speed Power Switching

R07DS0057EJ0200

(Previous: REJ03G1667-0100)

Rev.2.00

Jul 23, 2010

Features



Low on-resistance

R_DS(on)= 0.14  typ. (at I_D= 10 A, V_GS= 10 V, Ta = 25C)

Low leakage current

High speed switching

Built-in fast recovery diode



Outline

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

250

Gate to source voltage

30

Drain current

Note1

Drain peak current

I_{D (pulse)}

I_DR

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Note1

I_{DR (pulse)}

Note3

I_AP

Note3

Avalanche energy

E_AR

Channel dissipation

Pch ^Note2

ch-c

Tch

Channel to case thermal impedance

Channel temperature

1.67

C/W

C

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

3. STch = 25C, Tch  150C

R07DS0057EJ0200 Rev.2.00

Jul 23, 2010

Page 1 of 6

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