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H11G2SR2M PDF预览

H11G2SR2M

更新时间: 2023-09-03 20:28:27
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件光电
页数 文件大小 规格书
10页 396K
描述
6 引脚 DIP 高电压光电达林顿输出光耦合器

H11G2SR2M 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SURFACE MOUNT PACKAGE-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.80.00
Factory Lead Time:5 weeks风险等级:1.1
其他特性:UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min:80 V
配置:SINGLE当前传输比率-最小值:500%
标称电流传输比:1000%最大暗电源:100 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:7500 VJESD-609代码:e3
安装特点:SURFACE MOUNT元件数量:1
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER最大功率耗散:0.26 W
子类别:Optocoupler - Transistor Outputs表面贴装:YES
端子面层:Tin (Sn)Base Number Matches:1

H11G2SR2M 数据手册

 浏览型号H11G2SR2M的Datasheet PDF文件第2页浏览型号H11G2SR2M的Datasheet PDF文件第3页浏览型号H11G2SR2M的Datasheet PDF文件第4页浏览型号H11G2SR2M的Datasheet PDF文件第5页浏览型号H11G2SR2M的Datasheet PDF文件第6页浏览型号H11G2SR2M的Datasheet PDF文件第7页 
6-Pin DIP High Voltage  
Photodarlington  
Optocouplers  
H11G1M, H11G2M  
Description  
www.onsemi.com  
The H11G1M and H11G2M are photodarlingtontype optically  
coupled optocouplers. These devices have a gallium arsenide infrared  
emitting diode coupled with a silicon darlington connected  
phototransistor which has an integral baseemitter resistor to optimize  
elevated temperature characteristics.  
PDIP6 8.51x6.35, 2.54P  
6
6
CASE 646BY  
1
Features  
High BV  
:
CEO  
PDIP6 8.51x6.35, 2.54P  
CASE 646BX  
100 V Minimum for H11G1M  
80 V Minimum for H11G2M  
1
1
High Sensitivity to Low Input Current  
(Minimum 500% CTR at I = 1 mA)  
F
Low Leakage Current at Elevated Temperature  
PDIP6 8.51x6.35, 2.54P  
CASE 646BZ  
6
(Maximum 100 mA at 80°C)  
Safety and Regulatory Approvals:  
UL1577, 4,170 VAC  
for 1 Minute  
RMS  
DINEN/IEC6074755, 850 V Peak Working Insulation Voltage  
MARKING DIAGRAM  
Application  
ON  
CMOS Logic Interface  
Telephone Ring Detector  
Low Input TTL Interface  
Power Supply Isolation  
Replace Pulse Transformer  
H11G1  
VXYYQ  
H11G1 = Specific Device Code  
V
= DIN EN/IEC6074755 Option (only  
appears on component ordered with  
this option)  
X
YY  
Q
= OneDigit Year Code  
= Digit Work Week  
= Assembly Package Code  
SCHEMATIC  
ANODE  
1
6
BASE  
CATHODE 2  
5
4
COLLECTOR  
EMITTER  
3
N/C  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
July, 2020 Rev. 2  
H11G1M/D  

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