H11G1X, H11G2X, H11G3X
H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
Dimensions in
mm
APPROVALS
2.54
l
UL recognised, File No. E91231
1
6
7.0
6.0
'X' SPECIFICATION APPROVALS
2
3
5
4
l
VDE 0884 in 2 available lead forms : -
- STD
- G form
1.2
7.62
6.62
7.62
4.0
3.0
DESCRIPTION
The H11G_ series are optically coupled isolators
consisting of an infrared light emitting diode and
a high voltage NPN silicon photo darlington
which has an integral base-emitter resistor to
optimise switching speed and elevated
temperature characteristics in a standard 6pin
dual in line plastic package.
13°
Max
0.5
3.0
0.26
3.35
0.5
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
FEATURES
Storage Temperature
Operating Temperature
Lead Soldering Temperature
-55°C to + 150°C
-55°C to + 100°C
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV ,7.5kV
(1/16 inch (1.6mm) from case for 10 secs) 260°C
l
l
l
l
)
High Current Transfer Ratio (R1M0S00% mPiKn)
High BV (H11G1 - 100V min.)
Low collCeEcOtor dark current :-
100nA max. at 80V VCE
INPUT DIODE
Forward Current
60mA
3A
Peak Forward Current
(1µs pulse, 300pps)
Reverse Voltage
l
Low input current 1mA IF
3V
Power Dissipation
100mW
APPLICATIONS
l
l
l
l
Modems
Copiers, facsimiles
Numerical control machines
Signal transmission between systems of
different potentials and impedances
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
H11G3, H11G2, H11G1
Collector-base Voltage BVCBO
H11G3, H11G2, H11G1
Emitter-baseVoltage BVECO
Power Dissipation
55, 80, 100V
55, 80, 100V
6V
200mW
OPTION G
7.62
OPTION SM
SURFACE MOUNT
POWER DISSIPATION
0.6
0.1
1.25
0.75
0.26
Total Power Dissipation
260mW
10.46
9.86
10.16
ISOCOMCOMPONENTSLTD
Unit25B, ParkViewRoadWest,
Park View Industrial Estate, Brenda Road
Hartlepool,TS251YDEnglandTel:(01429)863609
Fax:(01429)863581 e-mail sales@isocom.co.uk
http://www.isocom.com
7/12/00
DB92008m-AAS/a1