Datasheet > GUR5H60-HE3/45

GUR5H60-HE3/45

更新时间： 2024-11-21 14:42:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	129K
描述
DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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GUR5H60-HE3/45 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AC
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-2	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

GUR5H60-HE3/45 数据手册

GUR5H60, GURF5H60 & GURB5H60

Vishay General Semiconductor

Ultrafast Rectifier

FEATURES

TO-220AC

ITO-220AC

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C (for TO-263AB

package)

GUR5H60

PIN 1

GURF5H60

PIN 1

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

CASE

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high voltage and high frequency power

factor corrector, freewheeling diodes and secondary

dc-to-dc rectification application.

GURB5H60

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

5.0 A

600 V

90 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

30 ns

1.6 V

V_F

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

480

420

600

UNIT

Maximum repetitive peak reverse voltage

Maximum working reverse voltage

Maximum RMS voltage

V_RRM

V_RWM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Reverse energy

E_R

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

V_AC

1500

Document Number: 88650

Revision: 06-Aug-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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与GUR5H60-HE3/45相关器件

型号	品牌	获取价格	描述	数据表
GURAE83	CYSTEKEC	获取价格	Low Vcesat NPN Epitaxial Planar Transistor
GURB5H60	VISHAY	获取价格	Ultrafast Rectifiers
GURB5H60/31	VISHAY	获取价格	Rectifier Diode, 1 Element, 5A, 600V V(RRM)
GURB5H60/45	VISHAY	获取价格	Rectifier Diode, 1 Element, 5A, 600V V(RRM)
GURB5H60/81	VISHAY	获取价格	Rectifier Diode, 1 Element, 5A, 600V V(RRM)
GURB5H60-31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
GURB5H60-45	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
GURB5H60-81	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
GURB5H60-E3/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, P
GURB5H60-E3/45	VISHAY	获取价格	Ultrafast Rectifier

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