Datasheet > GUFB30M

GUFB30M

更新时间： 2024-11-28 07:02:15

品牌	Logo	应用领域
海湾 - GULFSEMI		/
页数	文件大小	规格书
2页	75K
描述
SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE: 1000V CURRENT: 3.0A

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GUFB30M 数据手册

GUFB30M

SINTERED GLASS JUNCTION

PLASTIC RECTIFIER

VOLTAGE: 1000V

CURRENT: 3.0A

G-3

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of

MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Operate at Ta =55°C with no thermal run away

Typical Ir<0.1µA

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBOL

GUFB30M

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrrm

Vrms

Vdc

1000

700

Maximum DC blocking Voltage

1000

3.0

Maximum Average Forward Rectified Current 3/8”lead

length at Ta =55°C

Peak Forward Surge Current 8.3ms single Half sine-

wave superimposed on rated load

If(av)

Ifsm

80.0

1.70

Maximum Instantaneous Forward Voltage at 9.0A

10.0

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25°C

Ta =150°C

µA

100.0

Maximuml Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

(Note 3)

Trr

40.0

Rth(ja)

Tstg, Tj

20.0

°C /W

°C

Storage and Operating Junction Temperature

Note:

-65 to +175

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A1

www.gulfsemi.com

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