Datasheet > GTT2610

GTT2610

更新时间： 2024-11-27 03:40:03

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	269K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

获取价格

数据手册

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GTT2610 数据手册

Pb Free Plating Product

ISSUED DATE :2006/06/13

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

60V

90mꢁ

GTT2610

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device.

The GTT2610 is universally used for all commercial-industrial applications.

Features

*Simple Drive Requirement

*Small Package Outline

Package Dimensions

Millimeter

Min. Max.

1.10 MAX.

Millimeter

Min. Max.

0.45 REF.

0.60 REF.

REF.

ꢀ

0.70

0.10

1.00

0°

0.30

10°

0.50

0.12 REF.

2.70

2.60

1.40

3.10

3.00

1.80

0.95 REF.

1.90 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

±20

Gate-Source Voltage

V_GS

Continuous Drain Current³, V_GS@4.5V

Pulsed Drain Current^1,2

I_D@T

=25к

=70к

3.0

2.3

I_DM

Power Dissipation

P_D@T

=25к

W/к

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.016

-55 ~ +150

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

62.5

Unit

к/W

Thermal Resistance Junction-ambient³Max.

GTT2610

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