Datasheet > GTT8205S

GTT8205S

更新时间： 2024-11-29 03:26:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	318K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

获取价格

数据手册

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GTT8205S 数据手册

Pb Free Plating Product

ISSUED DATE :2006/07/19

REVISED DATE :2006/11/09B

GTM

CORPORATION

BVDSS

DS(ON)

20V

28mꢁ

GTT8205S

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GTT8205S provide the designer with best combination of fast switching, low on-resistance and

cost-effectiveness.

The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.

Features

* Low on-resistance

*Capable of 2.5V gate drive

*Low drive current

Package Dimensions

Millimeter

REF.

Min.

Max.

Min.

0.45 REF.

0.60 REF.

Max.

1.10 MAX.

ꢀ

0.70

0.10

1.00

0°

0.30

10°

0.50

0.12 REF.

2.70

2.60

1.40

3.10

3.00

1.80

0.95 REF.

1.90 REF.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

±8

Gate-Source Voltage

V_GS

Continuous Drain Current³, VGS@4.5V

Pulsed Drain Current¹

I_D@T

=25к

=70к

4.8

I_DM

Total Power Dissipation

P_D@T

=25к

1.14

0.01

-55 ~ +150

W/к

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

110

к/W

GTT8205S

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