Datasheet > GT6924E

GT6924E

更新时间： 2024-11-06 03:40:03

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
4页	275K
描述
N-CHANNEL MOSFET WITH SWITCHING DIODE

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中文翻译

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数据手册

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GT6924E 数据手册

Pb Free Plating Product

ISSUED DATE :2006/01/25

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

20V

600mꢀ

GT6924E

N - C H A N N E L M O S F E T W I T H S C H O T T K Y D I O D E

Description

The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Lower on-resistance

*Fast Switching Characteristic

*Included Schottky Diode

Package Dimensions

Millimeter

Dimensions

Millimeter

1.90 REF.

1.20 REF.

0.12 REF.

0.37 REF.

0.60 REF.

0.95 REF.

REF.

Min.

Max.

3.10

3.00

1.80

0.55

0.10

10°

2.70

2.60

1.40

0.30

0°

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage (MOSFET)

Gate-Source Voltage (MOSFET)

Continuous Drain Current³(MOSFET)

Pulsed Drain Current¹(MOSFET)

Reverse Voltage (Schottky)

± 6

V_GS

I_D@T

=25к

=70к

1.0

0.8

I_DM

V_KA

I_F

Average Forward Current (Schottky)

Pulsed Forward Current¹(Schottky)

Total Power Dissipation (MOSFET)

Total Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range

0.5

I_FM

2.0

P_D@T

A=25к

0.9

Tj, Tstg

-55 ~ +125

Thermal Data

Parameter

Symbol

Rthj-a

Value

110

Unit

к/W

Thermal Resistance Junction-ambient (MOSFET)

ax.

Thermal Resistance Junction-ambient (Schottky)

110

GT6924E

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