5秒后页面跳转
GT4350R PDF预览

GT4350R

更新时间: 2024-04-09 19:00:18
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 490K
描述
50V,3A,General Purpose NPN Bipolar Transistor

GT4350R 数据手册

 浏览型号GT4350R的Datasheet PDF文件第1页浏览型号GT4350R的Datasheet PDF文件第2页浏览型号GT4350R的Datasheet PDF文件第3页 
NPN Silicon Epitaxial Planar Transistor  
GT4350R  
Package Outline Dimensions (Unit: mm)  
SOT-223  
Dimension  
Min.  
6.10  
3.30  
1.50  
0.66  
0.90  
2.90  
2.20  
0.02  
1.52  
0.20  
6.70  
Max.  
6.50  
3.70  
1.70  
0.82  
1.15  
3.10  
2.40  
0.10  
1.80  
0.40  
7.30  
A
B
C
D
E
F
G
H
I
J
K
Mounting Pad Layout (Unit: mm)  
SOT-223  
IMPORTANT NOTICE  
Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further  
notice to any product information (copyrighted) herein to make corrections, modifications, improvements,  
or other changes. GME does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others.  
STM0457A: June 2020  
www.gmesemi.com  
4

与GT4350R相关器件

型号 品牌 描述 获取价格 数据表
GT4435PW ETC Mini size of Discrete semiconductor elements

获取价格

GT4510R Galaxy Microelectronics 100V,5A,General Purpose NPN Bipolar Transistor

获取价格

GT45F122 TOSHIBA Bipolar Small-Signal Transistors

获取价格

GT45F123 TOSHIBA TRANSISTOR 300 V, N-CHANNEL IGBT, TO-220AB, 2-10U1C, TO-220SIS, 3 PIN, Insulated Gate BIP

获取价格

GT45F124 TOSHIBA Bipolar Small-Signal Transistors

获取价格

GT45F125 TOSHIBA Bipolar Small-Signal Transistors

获取价格