生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 5.6 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 85 °C | 极性/信道类型: | P-CHANNEL |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
GT4510R | Galaxy Microelectronics | 100V,5A,General Purpose NPN Bipolar Transistor |
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GT45F122 | TOSHIBA | Bipolar Small-Signal Transistors |
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|
GT45F123 | TOSHIBA | TRANSISTOR 300 V, N-CHANNEL IGBT, TO-220AB, 2-10U1C, TO-220SIS, 3 PIN, Insulated Gate BIP |
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GT45F124 | TOSHIBA | Bipolar Small-Signal Transistors |
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|
GT45F125 | TOSHIBA | Bipolar Small-Signal Transistors |
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|
GT45F127 | TOSHIBA | Bipolar Small-Signal Transistors |
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