Datasheet > GT4350R

GT4350R

更新时间： 2024-04-09 19:00:18

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	490K
描述
50V,3A,General Purpose NPN Bipolar Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT4350R 数据手册

NPN Silicon Epitaxial Planar Transistor

GT4350R

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Test Condition

Min. Typ. Max. Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

I_C= 10μA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10μA, I_C= 0

0.1

100

V_CB= 50V, I_E= 0, T_J= 25°C

V_CB= 50V, I_E= 0, T_J= 150°C

V_EB= 5V, I_C= 0

μA

Collector Cut-off Current

Emitter Cut-off Current

I_CBO

I_EBO

V_CE= 2V, I_C= 100mA

V_CE= 2V, I_C= 500mA

V_CE= 2V, I_C= 1A

300

DC Current Gain

h_FE

300

V_CE= 2V, I_C= 2A

200

V_CE= 2V, I_C= 3A

100

I_C= 500mA, I_B= 50mA

I_C= 1A, I_B= 50mA

I_C= 2A, I_B= 100mA

I_C= 2A, I_B= 200mA

I_C= 3A, I_B= 300mA

I_C= 2A, I_B= 100mA

I_C= 3A, I_B= 300mA

I_C= 1A, V_CE= 2V

160

280

260

370

1.1

Collector-emitter Saturation Voltage

Base-emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

1.2

Base-emitter Voltage

Transition Frequency

V_BE(on)

f_T

1.2

V_CE= 5V, I_C= 100mA

f = 100MHz

100

MHz

_CB= 10V, I_E= I_e= 0

Output Capacitance

C_ob

f = 1MHz

Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm²

STM0457A: June 2020

www.gmesemi.com

123 4

下载PDF

与GT4350R相关器件

型号	品牌	描述	获取价格	数据表
GT4435PW	ETC	Mini size of Discrete semiconductor elements	获取价格
GT4510R	Galaxy Microelectronics	100V,5A,General Purpose NPN Bipolar Transistor	获取价格
GT45F122	TOSHIBA	Bipolar Small-Signal Transistors	获取价格
GT45F123	TOSHIBA	TRANSISTOR 300 V, N-CHANNEL IGBT, TO-220AB, 2-10U1C, TO-220SIS, 3 PIN, Insulated Gate BIP	获取价格
GT45F124	TOSHIBA	Bipolar Small-Signal Transistors	获取价格
GT45F125	TOSHIBA	Bipolar Small-Signal Transistors	获取价格