Datasheet > GSQ05A04B

GSQ05A04B

更新时间： 2024-11-11 23:14:55

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	58K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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GSQ05A04B 数据手册

SBD T y p e : GSQ05A04B

OULINE DRAWING

FEATURES

*Similar to TO-220AC Case

*Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150 °C operation

Maximum Ratings

Approx Net Weight: 1.9g

GSQ05A04B

Rating

Symbol

V_RRM

Unit

Repetitive Peak Reverse Voltage

50 Hz half Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

Tc=122°C

I_F(RMS)

I_FSM

7.85

50Hz Half Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

120

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 5 A

0.55

°C /W

Rth(j-c) Junction to Case

12 3 4 5 6

中文翻译

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