Datasheet > GSDS50018

GSDS50018

更新时间： 2024-10-31 23:54:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	50K
描述
TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 50A I(C) \| TO-3

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GSDS50018 数据手册

Data Sheet No. GSDS50018 &

GSDS50020

Ge ne ric Pa rt Numbe r:

Type GSDS50018 &

GSDS50020

GSDS50018 & GSDS50020

High Power NPN Transistors

180 V & 200 V, 50 Amp Switching

TO-3 (TO-2004AE) Case

Features:

Applications:

High Speed Switching

Power Conversion

Converters

High Voltage

High Gain

High Current

Inverters

Low Saturation Voltages

Fast Switching

Class D Amplifiers

Class C Amplifiers

Radiation Resistant

emicoa’s GSD series is a family of NPN silicon transistors designed for high

speed switching systems. This unique series utilizes technology that provides

surface stabilization for high voltage operation and enhances long term reliability. A

design feature is the use of an interdigital emitter providing a periphery greater than

7.0 inches. This improves both the gain and current handling capability.

These transistors have been specifically designed and engineered for high speed,

high voltage switching applications where the designer is concerned with optimizing

power conversion efficiency.

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型号	品牌	获取价格	描述	数据表
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