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GSD1857

更新时间: 2024-01-13 15:48:21
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页数 文件大小 规格书
1页 122K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

GSD1857 数据手册

  
ISSUED DATE :2003/10/22  
REVISED DATE :2004/11/29B  
GTM  
CORPORATION  
GSD1857  
POWER TRANSISTOR  
N P N E P ITA X I AL P L A N A R T R A N SI S T OR  
FEATURES  
*High breakdown voltage. (BVCEO=120V)  
.
*Low collector output capacitance. (Type.20pF at VCB=10V)  
*High transition frequency. (fT=80MHz)  
Package Dimensions  
D
E
S 1  
TO-92  
b1  
S E A T IN G  
P L A N E  
Millimeter  
Min. Max.  
Millimeter  
Min. Max.  
REF.  
A
REF.  
4.45  
1.02  
0.36  
0.36  
0.36  
4.7  
-
0.51  
0.76  
0.51  
D
E
L
e1  
e
4.44  
3.30  
12.70  
4.7  
3.81  
-
S1  
b
b1  
1.150 1.390  
2.42 2.66  
C
e1  
b
e
C
Absolute Maximum Ratings (Ta = 25к)  
Parameter  
Ratings  
120  
120  
5
Unit  
VCBO  
CEO  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collect Current(DC)  
V
V
V
V
VEBO  
I
C
2
A
I
Tj  
TsTG  
P
CP  
Collect Current*(Pulse)  
Junction Temperature  
Storage Temperature Range  
Total Power Dissipation  
3
A
+150  
-55 ~ +150  
1
ć
ć
W
D
Electrical Characteristics (Ta = 25к)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
120  
120  
Typ.  
Max.  
-
-
Unit  
V
V
Test Conditions  
-
-
I
I
I
V
V
C
C
=50uA  
=1mA  
5
-
-
-
-
1
1
V
E
=50uA  
CB=100V  
BE=4V  
I
CBO  
uA  
uA  
mV  
I
EBO  
-
*VCE(sat)  
FE  
-
82  
-
-
-
80  
20  
400  
390  
-
l
C
=1A,I  
CE=5V,IC  
B
=100mA  
=0.1A  
VCE=5V,IE=100mA, f=30MHz  
VCB=10V, IE=0A,f=1MHz  
h
V
fT  
Cob  
MHz  
pF  
-
-
Classification Of hFE1  
*Measured using pulse current.  
Rank  
P
Q
R
Range  
82-180  
120-270  
180-390  
Important Notice:  
ó
ó
ó
ó
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.  
GTM reserves the right to make changes to its products without notice.  
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.  
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.  
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785  
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China  
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165  
ó
!
GSD1857  
Page: 1/1  

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