5秒后页面跳转
GSD1080S PDF预览

GSD1080S

更新时间: 2024-09-30 01:05:39
品牌 Logo 应用领域
钜兴 - JUXING /
页数 文件大小 规格书
2页 4541K
描述
Surface Mount Schottky Rectifiers

GSD1080S 数据手册

 浏览型号GSD1080S的Datasheet PDF文件第2页 
GSD1045S THRU GSD10100S  
Surface Mount Schottky Rectifiers  
)HDWXUHV  
TO-277B  
· Schottky Barrier Chip  
· High Thermal Reliability  
· Patented Super Barrier Rectifier Technology  
· High Forward Surge Capability  
· Ultra Low Power Loss,High Efficiency  
· Excellent High Temperature Stability  
.
lastic material-UL flammability 94V-0  
P
Mechanical Data  
.
Case: TO-277B, molded plastic  
· Terminals:Plated Leads Solderable per  
MIL-STD-202,Method 208  
· Polarity:Cathode Band  
· Mounting Position:Any  
· Marking:Type Number  
dimensions in inches and (millimeters)  
· Lead Free:For RoHS/Lead Free Version  
Maximum Ratings and Electrical Characteristics @TA =25unless otherwise specified  
Single Phase,half wave,60Hz,resistive or inductive load.For capacitive load,derate current by 20%.  
Parameter  
Symbol  
Unit  
V
GSD1045S GSD1050S GSD1060S GSD1080S GSD10100S  
VRRM  
VRWM  
VDC  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC blocking voltage  
60  
42  
80  
56  
45  
28  
50  
35  
100  
VR(RMS)  
IF(AV)  
RMS Rectified Voltage  
70  
V
A
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge8.3ms  
10  
(Note1)  
Single Half Sine-Wave Superimposed on rated  
load(JEDEC Method)  
275  
A
IFSM  
(Note2)  
I2t Rating for Fusing (t < 8.3ms)  
2s  
A
I
2 t  
313.844  
Forward Voltage Drop T =25  
A
VFM  
V
0.42  
0.70  
0.45  
0.50  
@ IF=10A  
Peak Reverse Curent  
T =25℃  
T =100℃  
A
A
0.3  
15  
IR  
mA  
At Rated DC Blocking Voltage  
RθJA  
RθJL  
Typical Thermal Resistance  
Junctionto Ambient  
80  
15  
/W  
TJ  
Operating junction temperature range  
-55 to +150  
TSTG  
storage temperature range  
-55 to +150  
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.  
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4m  
m.  
http://www.trr-jx.com  
version: 02  

与GSD1080S相关器件

型号 品牌 获取价格 描述 数据表
GSD-150 ETC

获取价格

Step-Down Auto Transformers
GSD-1500 ETC

获取价格

Step-Down Auto Transformers
GSD1616A GTM

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
GSD1624 GTM

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
GSD1857 GTM

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
GS-D200 STMICROELECTRONICS

获取价格

2/2.5A BIPOLAR STEPPER MOTOR DRIVE MODULES
GSD2004A VISHAY

获取价格

Dual Common-Anode Small-Signal High-Voltage Switching Diode
GSD2004A/E8 VISHAY

获取价格

Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, TO-236AB
GSD2004A_18 VISHAY

获取价格

Dual Common Anode Small Signal High Voltage Switching Diode
GSD2004A-E3-08 VISHAY

获取价格

Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3