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GS88118GT-100 PDF预览

GS88118GT-100

更新时间： 2024-11-19 08:29:23
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
33页 463K
描述
Cache SRAM, 512KX18, 12ns, CMOS, PQFP100, TQFP-100

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中文翻译

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GS88118GT-100 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：QFP
包装说明：LQFP,针数：100
Reach Compliance Code：compliantECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.63
最长访问时间：12 ns其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码：R-PQFP-G100JESD-609代码：e3
长度：20 mm内存密度：9437184 bit
内存集成电路类型：CACHE SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：100字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX18封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.6 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：PURE MATTE TIN
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

GS88118GT-100 数据手册

 浏览型号GS88118GT-100的Datasheet PDF文件第2页浏览型号GS88118GT-100的Datasheet PDF文件第3页浏览型号GS88118GT-100的Datasheet PDF文件第4页浏览型号GS88118GT-100的Datasheet PDF文件第5页浏览型号GS88118GT-100的Datasheet PDF文件第6页浏览型号GS88118GT-100的Datasheet PDF文件第7页 
Preliminary  
GS88118/36T-11/11.5/100/80/66  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
100 MHz–66 MHz  
3.3 V VDD  
3.3 V and 2.5 V I/O  
512K x 18, 256K x 36 ByteSafe™  
8Mb Sync Burst SRAMs  
counter may be configured to count in either linear or  
1.11 9/2000Features  
• FT pin for user-configurable flow through or pipelined  
operation  
• Single Cycle Deselect (SCD) Operation  
• IEEE 1149.1 JTAG-compatible Boundary Scan  
• On-chip write parity checking; even or odd selectable  
• 3.3 V +10%/–5% core power supply  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Flow Through/Pipeline Reads  
The function of the Data Output register can be controlled by  
the user via the FT mode pin (Pin 14). Holding the FT mode  
pin low places the RAM in Flow Through mode, causing  
output data to bypass the Data Output Register. Holding FT  
high places the RAM in Pipeline mode, activating the rising-  
edge-triggered Data Output Register.  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Common data inputs and data outputs  
• Clock Control, registered, address, data, and control  
• Internal self-timed write cycle  
• Automatic power-down for portable applications  
• 100-lead TQFP package  
SCD Pipelined Reads  
The GS88118//36T is a SCD (Single Cycle Deselect) pipelined  
synchronous SRAM. DCD (Dual Cycle Deselect) versions are  
also available. SCD SRAMs pipeline deselect commands one  
stage less than read commands. SCD RAMs begin turning off  
their outputs immediately after the deselect command has been  
captured in the input registers.  
-11  
-11.5  
10 ns  
-100  
-80  
-66  
Byte Write and Global Write  
Pipeline tCycle 10 ns  
10 ns 12.5 ns 15 ns  
3-1-1-1  
t
4.0 ns 4.0 ns 4.0 ns 4.5 ns 5.0 ns  
225 mA 225 mA 225 mA 200 mA 185 mA  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the byte write  
control inputs.  
KQ  
DD  
I
Flow  
Through  
2-1-1-1  
t
11 ns 11.5 ns 12 ns  
15 ns 15 ns 15 ns  
180 mA 180 mA 180 mA 175 mA 165 mA  
14 ns  
15 ns  
18 ns  
20 ns  
KQ  
tCycle  
I
DD  
ByteSafe™ Parity Functions  
The GS88118/36T features ByteSafe data security functions.  
See detailed discussion following.  
Functional Description  
Sleep Mode  
Applications  
Low power (Sleep mode) is attained through the assertion  
(high) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
The GS88118//36T is a 9,437,184-bit high performance  
synchronous SRAM with a 2-bit burst address counter.  
Although of a type originally developed for Level 2 Cache  
applications supporting high performance CPUs, the device  
now finds application in synchronous SRAM applications,  
ranging from DSP main store to networking chip set support.  
Core and Interface Voltages  
The GS88118//36T operates on a 3.3 V power supply, and all  
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate  
output power (V  
) pins are used to decouple output noise  
DDQ  
Controls  
from the internal circuit.  
Addresses, data I/Os, chip enables (E1, E2), address burst  
control inputs (ADSP, ADSC, ADV) and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with either ADSP or ADSC inputs. In  
Burst mode, subsequent burst addresses are generated  
internally and are controlled by ADV. The burst address  
Rev: 1.11 9/2000  
1/33  
© 2000, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
1234567...33

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GS88118GT-11.5IT GSI

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 		Cache SRAM, 512KX18, 11.5ns, CMOS, PQFP100, TQFP-100
GS88118GT-11.5T GSI

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 		Cache SRAM, 512KX18, 11.5ns, CMOS, PQFP100, TQFP-100
GS88118GT-11T GSI

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 		Cache SRAM, 512KX18, 11ns, CMOS, PQFP100, TQFP-100
GS88118GT-66I GSI

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 		暂无描述
GS88118GT-66IT GSI

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 		Cache SRAM, 512KX18, 18ns, CMOS, PQFP100, TQFP-100
GS88118GT-80I GSI

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 		Cache SRAM, 512KX18, 14ns, CMOS, PQFP100, TQFP-100
GS88118GT-80T GSI

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 		Cache SRAM, 512KX18, 14ns, CMOS, PQFP100, TQFP-100

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