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GS880E32AGT-250T PDF预览

GS880E32AGT-250T

更新时间： 2024-11-12 09:03:59
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
24页 619K
描述
Cache SRAM, 256KX32, 5.5ns, CMOS, PQFP100, TQFP-100

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GS880E32AGT-250T 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：QFP包装说明：LQFP,
针数：100Reach Compliance Code：compliant
ECCN代码：3A991.B.2.BHTS代码：8542.32.00.41
风险等级：5.73最长访问时间：5.5 ns
其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLYJESD-30 代码：R-PQFP-G100
JESD-609代码：e3长度：20 mm
内存密度：8388608 bit内存集成电路类型：CACHE SRAM
内存宽度：32湿度敏感等级：3
功能数量：1端子数量：100
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX32
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.6 mm
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：PURE MATTE TIN端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

GS880E32AGT-250T 数据手册

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GS880E18/32/36AT-250/225/200/166/150/133  
250 MHz–133 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
512K x 18, 256K x 32, 256K x 36  
9Mb Synchronous Burst SRAMs  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Features  
• FT pin for user-configurable flow through or pipeline  
operation  
• Dual Cycle Deselect (DCD) operation  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
Flow Through/Pipeline Reads  
The function of the Data Output register can be controlled by  
the user via the FT mode pin (Pin 14). Holding the FT mode  
pin low places the RAM in Flow Through mode, causing  
output data to bypass the Data Output Register. Holding FT  
high places the RAM in Pipeline mode, activating the rising-  
edge-triggered Data Output Register.  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
DCD Pipelined Reads  
• Automatic power-down for portable applications  
• JEDEC-standard 100-lead TQFP package  
The GS880E18/32/36AT is a DCD (Dual Cycle Deselect)  
pipelined synchronous SRAM. SCD (Single Cycle Deselect)  
versions are also available. DCD SRAMs pipeline disable  
commands to the same degree as read commands. DCD RAMs  
hold the deselect command for one full cycle and then begin  
turning off their outputs just after the second rising edge of  
clock.  
Functional Description  
Applications  
The GS880E18/32/36AT is a 9,437,184-bit (8,388,608-bit for  
x32 version) high performance synchronous SRAM with a  
2-bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPUs, the device now finds application in  
synchronous SRAM applications, ranging from DSP main  
store to networking chip set support.  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write  
control inputs.  
Controls  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV), and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with either ADSP or ADSC inputs. In  
Burst mode, subsequent burst addresses are generated  
internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or  
Sleep Mode  
Low power (Sleep mode) is attained through the assertion  
(High) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Core and Interface Voltages  
The GS880E18/32/36AT operates on a 2.5 V or 3.3 V power  
supply. All input are 3.3 V and 2.5 V compatible. Separate  
output power (V  
) pins are used to decouple output noise  
DDQ  
from the internal circuits and are 3.3 V and 2.5 V compatible.  
Parameter Synopsis  
-250  
-225  
-200  
-166  
-150 -133 Unit  
2.5  
4.0  
2.7  
4.4  
3.0  
5.0  
3.4  
6.0  
3.8  
6.7  
4.0  
7.5  
ns  
ns  
Pipeline  
3-1-1-1  
t
KQ  
tCycle  
280  
330  
255  
300  
230  
270  
200  
230  
185  
215  
165  
190  
mA  
mA  
Curr (x18)  
Curr (x32/x36)  
Flow Through  
2-1-1-1  
t
5.5  
5.5  
6.0  
6.0  
6.5  
6.5  
7.0  
7.0  
7.5  
7.5  
8.5  
8.5  
ns  
ns  
KQ  
tCycle  
175  
200  
165  
190  
160  
180  
150  
170  
145  
165  
135  
150  
mA  
mA  
Curr (x18)  
Curr (x32/x36)  
Rev: 1.03 11/2004  
1/24  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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GS880E32AT-133 GSI

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GS880E32AT-133I GSI

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GS880E32AT-133T GSI

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 		Cache SRAM, 256KX32, 8.5ns, CMOS, PQFP100, TQFP-100
GS880E32AT-150 GSI

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GS880E32AT-150I GSI

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 		512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs
GS880E32AT-150IT GSI

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 		暂无描述
GS880E32AT-166 GSI

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 		512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs
GS880E32AT-166I GSI

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 		512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs
GS880E32AT-166T GSI

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 		Cache SRAM, 256KX32, 7ns, CMOS, PQFP100, TQFP-100
GS880E32AT-200 GSI

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 		512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs

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