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GS832236E-250 PDF预览

GS832236E-250

更新时间： 2024-11-06 20:34:27
品牌 Logo 应用领域
GSI 时钟静态存储器内存集成电路
页数 文件大小 规格书
46页 3069K
描述
Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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GS832236E-250 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：LBGA, BGA165,11X15,40针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.69
最长访问时间：6.5 ns其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
最大时钟频率 (fCLK)：250 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165长度：17 mm
内存密度：37748736 bit内存集成电路类型：CACHE SRAM
内存宽度：36湿度敏感等级：3
功能数量：1端子数量：165
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA165,11X15,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：1.4 mm最大待机电流：0.06 A
最小待机电流：2.38 V子类别：SRAMs
最大压摆率：0.3 mA最大供电电压 (Vsup)：2.7 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：15 mm
Base Number Matches：1

GS832236E-250 数据手册

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GS832218(B/E)/GS832236(B/E)/GS832272(C)  
119-, 165-, & 209-Pin BGA  
Commercial Temp  
Industrial Temp  
250 MHz–133 MHz  
2M x 18, 1M x 36, 512K x 72  
36Mb S/DCD Sync Burst SRAMs  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
either linear or interleave order with the Linear Burst Order (LBO)  
input. The Burst function need not be used. New addresses can be  
loaded on every cycle with no degradation of chip performance.  
Features  
• FT pin for user-configurable flow through or pipeline operation  
• Single/Dual Cycle Deselect selectable  
• IEEE 1149.1 JTAG-compatible Boundary Scan  
• ZQ mode pin for user-selectable high/low output drive  
• 2.5 V +10%/–10% core power supply  
• 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to SCD x18/x36 Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
Flow Through/Pipeline Reads  
The function of the Data Output register can be controlled by the  
user via the FT mode . Holding the FT mode pin low places the  
RAM in Flow Through mode, causing output data to bypass the  
Data Output Register. Holding FT high places the RAM in  
Pipeline mode, activating the rising-edge-triggered Data Output  
Register.  
SCD and DCD Pipelined Reads  
The GS832218/36/72 is a SCD (Single Cycle Deselect) and DCD  
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD  
SRAMs pipeline disable commands to the same degree as read  
commands. SCD SRAMs pipeline deselect commands one stage  
less than ead commands. SCD RAMs begin turning off their  
outputs immediately after the deselect command has been  
captured in the input registers. DCD RAMs hold the deselect  
command for one full cycle and then begin turning off their  
outputs just after the second rising edge of clock. The user may  
configure this SRAM for either mode of operation using the SCD  
mode input.  
• Automatic power-down for portable applications  
• JEDEC-standard 119-, 165-, and 209-bump BGA package  
• RoHS-compliant packages available  
Functional Description  
Applications  
The GS832218/36/72 is a 37,748,736-bit high performance  
synchronous SRAM with a 2-bit burst address counter. Although  
of a type originally developed for Level 2 Cache applications  
supporting high performance CPUs, the device now finds  
application in synchronous SRAM applications, ranging from  
DSP main store to networking chip set support.  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write control  
inputs.  
Controls  
Addresses, data I/Os, chip enable (E1), address burst control  
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,  
GW) are synchronous and are controlled by a positive-edge-  
triggered clock input (CK). Output enable (G) and power down  
control (ZZ) are asynchronous inputs. Burst cycles can be initiated  
with either ADSP or ADSC inputs. In Burst mode, subsequent  
burst addresses are generated internally and are controlled by  
ADV. The burst address counter may be configured to count in  
FLXDrive™  
The ZQ pin allows selection between high drive strength (ZQ low)  
for multi-drop bus applications and normal drive strength (ZQ  
floating or high) point-to-point applications. See the Output Driver  
Characteristics chart for details.  
Parameter Synopsis  
-250 -225 -200 -166 -150 -133 Unit  
t
KQ(x18/x36)  
2.5  
3.0  
4.0  
2.7  
3.0  
4.4  
3.0  
3.0  
5.0  
3.5  
3.5  
6.0  
3.8  
3.8  
6.7  
4.0  
4.0  
7.5  
ns  
ns  
ns  
t
KQ(x72)  
tCycle  
Pipeline  
3-1-1-1  
Curr (x18)  
Curr (x36)  
Curr (x72)  
285  
350  
440  
265  
320  
410  
245  
295  
370  
220  
260  
320  
210 185  
240 215  
300 265  
mA  
mA  
mA  
tKQ  
6.5  
6.5  
7.0  
7.0  
7.5  
7.5  
8.0  
8.0  
8.5  
8.5  
8.5  
8.5  
ns  
ns  
tCycle  
Flow  
Through  
2-1-1-1  
Curr (x18)  
Curr (x36)  
Curr (x72)  
205  
235  
315  
195  
225  
295  
185  
210  
265  
175  
200  
255  
165 155  
190 175  
240 230  
mA  
mA  
mA  
Rev: 1.07a 12/2007  
1/46  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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与GS832236E-250相关器件

型号 品牌 获取价格 描述 数据表
GS832236E-250I GSI

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 		Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
GS832236E-250IT GSI

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 		Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
GS832236E-250IV GSI

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 		Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS832236E-250IVT GSI

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 		Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS832236E-250V GSI

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 		Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS832236E-250VT GSI

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 		Cache SRAM, 1MX36, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS832236GB-133IV GSI

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 		Cache SRAM, 1MX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-
GS832236GB-133IVT GSI

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 		Cache SRAM, 1MX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-
GS832236GB-150 GSI

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 		Cache SRAM, 1MX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FBGA-1
GS832236GB-150I GSI

获取价格

 		Cache SRAM, 1MX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FBGA-1

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