Datasheet > GS8321Z18E-133VT

GS8321Z18E-133VT

更新时间： 2024-11-06 06:47:55

品牌	Logo	应用领域
GSI		静态存储器内存集成电路
页数	文件大小	规格书
33页	682K
描述
ZBT SRAM, 2MX18, 8.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

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技术参数
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GS8321Z18E-133VT 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	15 X 17 MM, 1 MM PITCH, FPBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.89
最长访问时间：	8.5 ns	其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码：	R-PBGA-B165	长度：	17 mm
内存密度：	37748736 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	18	功能数量：	1
端子数量：	165	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	2MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.5 mm	最大供电电压 (Vsup)：	2 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm

GS8321Z18E-133VT 数据手册

GS8321Z18/32/36E-xxxV

250 MHz–133 MHz

165-Bump FP-BGA

Commercial Temp

Industrial Temp

36Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable, ZZ and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• User-configurable Pipeline and Flow Through mode

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization

• Fully pin-compatible with both pipelined and flow through

NtRAM™, NoBL™ and ZBT™ SRAMs

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 1.8 V or 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices

• Byte write operation (9-bit Bytes)

The GS8321Z18/32/36E-xxxV may be configured by the user

to operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, in addition to the rising-edge-

triggered registers that capture input signals, the device

incorporates a rising-edge-triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

• 3 chip enable signals for easy depth expansion

• ZZ pin for automatic power-down

• JEDEC-standard 165-bump FP-BGA package

• RoHS-compliant 165-bump BGA package available

Functional Description

The GS8321Z18/32/36E-xxxV is a 36Mbit Synchronous Static

SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or

other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS8321Z18/32/36E-xxxV is implemented with GSI's high

performance CMOS technology and is available in JEDEC-

standard 165-bump FP-BGA package.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

3.0 3.0 3.0 3.5 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.6 7.5 ns

Pipeline

3-1-1-1

tCycle

Curr (x18) 285 265 245 220 210 185 mA

Curr (x32/x36) 350 320 295 260 240 215 mA

6.5 7.0 7.5 8.0 8.5 8.5 ns

Flow

Through

2-1-1-1

tCycle

Curr (x18) 205 195 185 175 165 155 mA

Curr (x32/x36) 235 225 210 200 190 175 mA

Rev: 1.06 4/2008

1/33

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...33

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与GS8321Z18E-133VT相关器件

型号	品牌	获取价格	描述	数据表
GS8321Z18E-150	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-150I	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-150IV	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-150IVT	GSI	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8321Z18E-150V	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-166	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-166I	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-166IV	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18E-166IVT	GSI	获取价格	ZBT SRAM, 2MX18, 7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8321Z18E-166V	GSI	获取价格	36Mb Pipelined and Flow Through Synchronous NBT SRAMs

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