Datasheet > GS8161E18BT-250VT

GS8161E18BT-250VT

更新时间： 2024-11-18 19:49:27

品牌	Logo	应用领域
GSI		静态存储器内存集成电路
页数	文件大小	规格书
34页	1134K
描述
Cache SRAM, 1MX18, 5.5ns, CMOS, PQFP100, TQFP-100

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GS8161E18BT-250VT 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.72	最长访问时间：	5.5 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY	JESD-30 代码：	R-PQFP-G100
长度：	20 mm	内存密度：	18874368 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	18
功能数量：	1	端子数量：	100
字数：	1048576 words	字数代码：	1000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	2 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS8161E18BT-250VT 数据手册

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GS8161ExxB(T/D)-xxxV

100-Pin TQFP & 165-Bump BGA

Commercial Temp

Industrial Temp

250 MHz–150 MHz

1M x 18, 512K x 36, 512K x 36

18Mb Sync Burst SRAMs

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

ADV. The burst address counter may be configured to count in

either linear or interleave order with the Linear Burst Order (LBO)

input. The Burst function need not be used. New addresses can be

loaded on every cycle with no degradation of chip performance.

Features

• FT pin for user-configurable flow through or pipeline

operation

• Dual Cycle Deselect (DCD) operation

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 1.8 V or 2.5 V core power supply

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by the

user via the FT mode pin (Pin 14). Holding the FT mode pin low

places the RAM in Flow Through mode, causing output data to

bypass the Data Output Register. Holding FT high places the

RAM in Pipeline mode, activating the rising-edge-triggered Data

Output Register.

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

DCD Pipelined Reads

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP and 165 BGA packages

• RoHS-compliant 100-lead TQFP and 165 BGA packages

available

The GS8161ExxB(T/D)-xxxV is a DCD (Dual Cycle Deselect)

pipelined synchronous SRAM. SCD (Single Cycle Deselect)

versions are also available. DCD SRAMs pipeline disable

commands to the same degree as read commands. DCD RAMs

hold the deselect command for one full cycle and then begin

turning off their outputs just after the second rising edge of clock.

Functional Description

Byte Write and Global Write

Applications

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write control

inputs.

The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high

performance synchronous SRAM with a 2-bit burst address

counter. Although of a type originally developed for Level 2

Cache applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications, ranging

from DSP main store to networking chip set support.

Sleep Mode

Low power (Sleep mode) is attained through the assertion (High)

of the ZZ signal, or by stopping the clock (CK). Memory data is

retained during Sleep mode.

Controls

Addresses, data I/Os, chip enable (E1), address burst control

inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,

GW) are synchronous and are controlled by a positive-edge-

triggered clock input (CK). Output enable (G) and power down

control (ZZ) are asynchronous inputs. Burst cycles can be initiated

with either ADSP or ADSC inputs. In Burst mode, subsequent

burst addresses are generated internally and are controlled by

Core and Interface Voltages

The GS8161ExxB(T/D)-xxxV operates on a 1.8 V or 2.5 V power

supply. All inputs are 1.8 V or 2.5 V compatible. Separate output

power (V_DDQ) pins are used to decouple output noise from the

internal circuits and are 1..8 V or 2.5 V compatible.

Parameter Synopsis

-250

-200

-150

Unit

t_KQ

tCycle

3.0

4.0

3.0

5.0

3.8

6.7

Pipeline

3-1-1-1

280

330

230

270

185

210

Curr (x18)

Curr (x32/x36)

t_KQ

5.5

6.5

7.5

tCycle

Flow Through

2-1-1-1

210

240

185

205

170

190

Curr (x18)

Curr (x32/x36)

Rev: 1.03 9/2008

1/34

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...34

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与GS8161E18BT-250VT相关器件

型号	品牌	获取价格	描述	数据表
GS8161E18BT-300	GSI	获取价格	Cache SRAM, 1MX18, 5.3ns, CMOS, PQFP100, TQFP-100
GS8161E18BT-V	GSI	获取价格	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18D-133	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18D-133I	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18D-133IT	GSI	获取价格	Cache SRAM, 1MX18, 8.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161E18D-133T	GSI	获取价格	Cache SRAM, 1MX18, 8.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161E18D-150	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18D-150I	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18D-150IT	GSI	获取价格	Cache SRAM, 1MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
GS8161E18D-150T	GSI	获取价格	Cache SRAM, 1MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

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