GS81302R08/09/18/36E-375/350/333/300/250
Background
Common I/O SRAMs, from a system architecture point of view, are attractive in read dominated or block transfer applications.
Therefore, the SigmaDDR-II SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs are
unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed
Common I/O SRAM data bandwidth in half.
Burst Operations
Read and write operations are “burst” operations. In every case where a read or write command is accepted by the SRAM, it will
respond by issuing or accepting four beats of data, executing a data transfer on subsequent rising edges of K and K, as illustrated in
the timing diagrams. New addresses can be loaded no more often than every other K clock cycle. Addresses can be loaded less
often, if intervening deselect cycles are inserted.
Deselect Cycles
Chip Deselect commands are pipelined to the same degree as read commands. This means that if a deselect command is applied to
the SRAM on the next cycle after a read command captured by the SRAM, the device will complete the four beat read data transfer
and then execute the deselect command, returning the output drivers to high-Z.A high on the LD# pin prevents the RAM from
loading read or write command inputs and puts the RAM into deselect mode as soon as it completes all outstanding burst transfer
operations.
SigmaDDR-II Burst of 4 SRAM Read Cycles
The status of the Address, LD# and R/W# pins are evaluated on the rising edge of K. Because the device executes a four beat burst
transfer in response to a read command, if the previous command captured was a read or write command, the Address, LD and R/
W pins are ignored. If the previous command captured was a deselect, the control pin status is checked.The SRAM executes
pipelined reads. The read command is clocked into the SRAM by a rising edge of K. After the next rising edge of K, the SRAM
produces data out in response to the next rising edge of C (or the next rising edge of K, if C and C are tied high). The second beat
of data is transferred on the next rising edge of C, then on the next rising edge of C and finally on the next rising edge of C, for a
total of four transfers per address load.
SigmaDDR-II Burst of 4 SRAM Write Cycles
The status of the Address, LD and R/W pins are evaluated on the rising edge of K. Because the device executes a four beat burst
transfer in response to a write command, if the previous command captured was a read or write command, the Address, LD and R/
W pins are ignored at the next rising edge of K. If the previous command captured was a deselect, the control pin status is
checked.The SRAM executes “late write” data transfers. Data in is due at the device inputs on the rising edge of K following the
rising edge of K clock used to clock in the write command and the write address. To complete the remaining three beats of the burst
of four write transfer the SRAM captures data in on the next rising edge of K, the following rising edge of K and finally on the next
rising edge of K, for a total of four transfers per address load.
Rev: 1.03b 12/2011
7/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5秒后页面跳转
STM32H743技术深度剖析与应用案例探索
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
74HC14芯片资料介绍：性能特性分析、引脚介绍
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
